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IRF7311

Description
Ultra Low On-Resistance
File Size661KB,7 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet View All

IRF7311 Overview

Ultra Low On-Resistance

IRF7311
MOSFET
l
l
l
l
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
1
8
7
D1
D1
D2
D2
2
V
DSS
= 20V
3
6
4
5
R
DS(on)
= 0.029Ω
T o p V ie w
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O P -8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
…
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Maximum
20
± 12
6.6
5.3
26
2.5
2.0
1.3
100
4.1
0.20
5.0
-55 to + 150
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
…
T
A
= 70°C
Single Pulse Avalanche Energy
‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Junction and Storage Temperature Range
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
…
Symbol
R
θJA
Limit
62.5
Units
°C/W
2014-8-8
1
www.kersemi.com
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