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PD44324182BF5-E33-FQ1-A

Description
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
File Size472KB,37 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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PD44324182BF5-E33-FQ1-A Overview

36M-BIT DDR II SRAM 2-WORD BURST OPERATION

Datasheet
μ
PD44324092B
μ
PD44324182B
μ
PD44324362B
36M-BIT DDR II SRAM
2-WORD BURST OPERATION
Description
The
μ
PD44324092B is a 4,194,304-word by 9-bit, the
μ
PD44324182B is a 2,097,152-word by 18-bit and the
μ
PD44324362B is a 1,048,576-word by 36-bit synchronous double data rate static RAM fabricated with
advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44324092B,
μ
PD44324182B and
μ
PD44324362B integrate unique synchronous peripheral circuitry
and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the
positive edge of K and K#. These products are suitable for application which require synchronous operation,
high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
R10DS0036EJ0200
Rev.2.00
August 2, 2011
Features
1.8
±
0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Two-tick burst for low DDR transaction size
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 20
μ
s after clock is resumed.
User programmable impedance output (35 to 70
Ω)
Fast clock cycle time : 3.3 ns (300 MHz), 3.5ns (287MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG 1149.1 compatible test access port
R10DS0036EJ0100 Rev.2.00
August 2, 2011
Page 1 of 36
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