Product Specification
www.jmnic.com
Silicon Power Transistors
2SD1588
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SB1097
・Low
speed switching
APPLICATIONS
・For
low frequency power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
emitter
Fig.1 simplified outline (TO-220Fa) and symbol
・
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
T
a
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
60
7
7
15
3.5
30
2
150
-55~150
UNIT
V
V
V
A
A
A
W
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=50mA , I
B
=0
I
C
=5A I
B
=0.5A
I
C
=5A I
B
=0.5A
V
CB
=80V I
E
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=1V
I
C
=5A ; V
CE
=1V
40
20
MIN
60
TYP.
2SD1588
MAX
UNIT
V
0.5
1.5
10
10
200
V
V
μA
μA
h
FE-1
Classifications
R
40-80
O
60-120
Y
100-200
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
PACKAGE OUTLINE
2SD1588
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
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