DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | QIMONDA |
Parts packaging code | BGA |
package instruction | TFBGA, BGA60,9X11,32 |
Contacts | 60 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.4 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 400 MHz |
I/O type | COMMON |
interleaved burst length | 4,8 |
JESD-30 code | R-PBGA-B60 |
length | 10.5 mm |
memory density | 536870912 bit |
Memory IC Type | DDR DRAM |
memory width | 8 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 60 |
word count | 67108864 words |
character code | 64000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 64MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA60,9X11,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 1.8 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1.2 mm |
self refresh | YES |
Continuous burst length | 4,8 |
Maximum standby current | 0.003 A |
Maximum slew rate | 0.155 mA |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |
width | 10 mm |
HYI18T512800B2F-25F | HYI18T512800B2F-2.5 | HYI18T512160B2F-3S | HYI18T512160B2F-25F | HYI18T512160B2F-2.5 | HYI18T512160B2F-3 | HYI18T512160B2F-5 | HYI18T512160B2F-3.7 | |
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Description | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
Parts packaging code | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
package instruction | TFBGA, BGA60,9X11,32 | TFBGA, BGA60,9X11,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 | TFBGA, BGA84,9X15,32 |
Contacts | 60 | 60 | 84 | 84 | 84 | 84 | 84 | 84 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Maximum access time | 0.4 ns | 0.4 ns | 0.45 ns | 0.4 ns | 0.4 ns | 0.45 ns | 0.6 ns | 0.5 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 400 MHz | 400 MHz | 333 MHz | 400 MHz | 400 MHz | 333 MHz | 200 MHz | 266 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
interleaved burst length | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
JESD-30 code | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B84 |
length | 10.5 mm | 10.5 mm | 12.5 mm | 12.5 mm | 12.5 mm | 12.5 mm | 12.5 mm | 12.5 mm |
memory density | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit |
Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
memory width | 8 | 8 | 16 | 16 | 16 | 16 | 16 | 16 |
Humidity sensitivity level | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 60 | 60 | 84 | 84 | 84 | 84 | 84 | 84 |
word count | 67108864 words | 67108864 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words |
character code | 64000000 | 64000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
organize | 64MX8 | 64MX8 | 32MX16 | 32MX16 | 32MX16 | 32MX16 | 32MX16 | 32MX16 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
Encapsulate equivalent code | BGA60,9X11,32 | BGA60,9X11,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 | BGA84,9X15,32 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
power supply | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
self refresh | YES | YES | YES | YES | YES | YES | YES | YES |
Continuous burst length | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 | 4,8 |
Maximum standby current | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A | 0.003 A |
Maximum slew rate | 0.155 mA | 0.153 mA | 0.218 mA | 0.225 mA | 0.223 mA | 0.22 mA | 0.22 mA | 0.22 mA |
Maximum supply voltage (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
Terminal form | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 | 40 | 40 | 40 | 40 |
width | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm | 10 mm |
Maker | QIMONDA | - | QIMONDA | QIMONDA | QIMONDA | QIMONDA | QIMONDA | QIMONDA |