NZT6714 datasheet, PDF - EEWORLD Datasheet

NZT6714: Description2000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261; CategoryDiscrete semiconductor The transistor; File Size65KB，4 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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2000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-based maximum capacity	30 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-261
JESD-30 code	R-PDSO-G4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.5 V

	NZT6714	TN6714A
Description	2000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261	2000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226
Is it Rohs certified?	incompatible	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G4	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A
Collector-based maximum capacity	30 pF	30 pF
Collector-emitter maximum voltage	30 V	30 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50
JEDEC-95 code	TO-261	TO-226
JESD-30 code	R-PDSO-G4	O-PBCY-W3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	4	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	WIRE
Terminal location	DUAL	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
VCEsat-Max	0.5 V	0.5 V

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