IRFR3911TRRPBF datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IRFR3911TRRPBF

IRFR3911TRRPBF: DescriptionPower Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size108KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRFR3911TRRPBF Overview

Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

IRFR3911TRRPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	68 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	56 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	56 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

PD - 94272

SMPS MOSFET

Applications

High frequency DC-DC converters

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

HEXFET Power MOSFET

IRFR3911

IRFU3911

14A

DSS

100V

DS(on)

max

0.115Ω

D-Pak

IRFR3911

I-Pak

IRFU3911

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

9.5

0.37

± 20

7.1

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

Typ.

–––

Max.

2.7

110

Units

°C/W

Notes

through

are on page 10

www.irf.com

01/22/02

IRFR3911TRRPBF Related Products

	IRFR3911TRRPBF	IRFR3911TRL	IRFR3911TR	IRFR3911TRR
Description	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible
Parts packaging code	TO-252AA	TO-252AA	TO-252AA	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	68 mJ	68 mJ	68 mJ	68 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	56 A	56 A	56 A	56 A
Maximum drain current (ID)	14 A	14 A	14 A	14 A
Maximum drain-source on-resistance	0.115 Ω	0.115 Ω	0.115 Ω	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e0	e0	e0
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	56 W	56 W	56 W	56 W
Maximum pulsed drain current (IDM)	56 A	56 A	56 A	56 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	-	Contains lead	Contains lead	Contains lead
Base Number Matches	-	1	1	1

Recommended Resources

Music light guessing game machine circuit

AD conversion system using LF398 sample and hold device

Proximity sensor signal processing circuit

Constant current source with wide adjustment range

LED signal amplifier circuit

Miniature wireless remote control circuit composed of T630/T631

SensorTile.box related information: [i=s]This post was last edited by littleshrimp on 2020-1-28 15:59[/i]DfuSe_Demo_V3.0.6_Setup.exeOn-board sensor data sheeten.fp-ai-sensing1.zip https://download.eeworld.com.cn/detail/littleshrimp/6085...; littleshrimp ST Sensors & Low Power Wireless Technology Forum

The amplification area of the transistor is also called the linear area. So if we do not consider factors such as temperature, it can be regarded as a linear state. Which one is right for MOS...: The amplification area of the transistor is also called the linear area. So if we don't consider factors such as temperature, it can be considered a linear state. Who has a deep understanding of the a...; QWE4562009 Discrete Device

Detailed analysis of the damage causes of power MOS tubes: The first type: avalanche damageIf a surge voltage exceeding the rated VDSS of the device is applied between the drain and source, and reaches the breakdown voltage V(BR)DSS (its value varies dependin...; wangerxian Analog electronics

Which is the control chip of this flyback power supply?: What is the control chip in the picture below? Does anyone know the specific model of the power chip in SOT23 package? I looked at these chips: OB2263, ME8200, PT4201, FS6830, but I'm not sure...; kal9623287 Power technology

Chanel lost the lawsuit against Huawei for logo infringement. Do you think these two logos are similar?: According to foreign media reports, French luxury brand Chanel lost its trademark dispute with Huawei.The dispute began in 2017 when Huawei applied to the European Union Intellectual Property Office (...; eric_wang Talking

Experts come to help: My topic is "Automatic Bus Stop Announcement". I have already completed the hardware schematic diagram and am now working on the main software program. Can anyone help me make a program?...; lechen555 Automotive Electronics

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components