IRFR3911TRR datasheet, PDF - EEWORLD Datasheet

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IRFR3911TRR: DescriptionPower Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size108KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFR3911TRR Overview

Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

IRFR3911TRR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	68 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	56 A
Maximum drain current (ID)	14 A
Maximum drain-source on-resistance	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	56 W
Maximum pulsed drain current (IDM)	56 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 94272

SMPS MOSFET

Applications

High frequency DC-DC converters

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective C

OSS

to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

HEXFET Power MOSFET

IRFR3911

IRFU3911

14A

DSS

100V

DS(on)

max

0.115Ω

D-Pak

IRFR3911

I-Pak

IRFU3911

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

9.5

0.37

± 20

7.1

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)*

Junction-to-Ambient

Typ.

–––

Max.

2.7

110

Units

°C/W

Notes

through

are on page 10

www.irf.com

01/22/02

IRFR3911TRR Related Products

	IRFR3911TRR	IRFR3911TRL	IRFR3911TR	IRFR3911TRRPBF
Description	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to
Parts packaging code	TO-252AA	TO-252AA	TO-252AA	TO-252AA
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, PLASTIC, DPAK-3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	68 mJ	68 mJ	68 mJ	68 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	56 A	56 A	56 A	56 A
Maximum drain current (ID)	14 A	14 A	14 A	14 A
Maximum drain-source on-resistance	0.115 Ω	0.115 Ω	0.115 Ω	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e0	e0	e0	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	56 W	56 W	56 W	56 W
Maximum pulsed drain current (IDM)	56 A	56 A	56 A	56 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN OVER NICKEL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Contains lead	Contains lead	Contains lead	-
Base Number Matches	1	1	1	-

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