Standard SRAM, 8KX8, 55ns, CMOS, CDIP28,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | TEMIC |
| Reach Compliance Code | unknown |
| Maximum access time | 55 ns |
| I/O type | COMMON |
| JESD-30 code | R-XDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of terminals | 28 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 8KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.02 A |
| Minimum standby current | 4.5 V |
| Maximum slew rate | 0.1 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| HM1E-65764N-8 | HM1E-65764K-8 | HM1E-65764M-8 | |
|---|---|---|---|
| Description | Standard SRAM, 8KX8, 55ns, CMOS, CDIP28, | Standard SRAM, 8KX8, 35ns, CMOS, CDIP28, | Standard SRAM, 8KX8, 45ns, CMOS, CDIP28, |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | TEMIC | TEMIC | TEMIC |
| Reach Compliance Code | unknown | unknown | unknown |
| Maximum access time | 55 ns | 35 ns | 45 ns |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 |
| JESD-609 code | e0 | e0 | e0 |
| memory density | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 8 | 8 | 8 |
| Number of terminals | 28 | 28 | 28 |
| word count | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C |
| organize | 8KX8 | 8KX8 | 8KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC | CERAMIC | CERAMIC |
| encapsulated code | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP28,.6 | DIP28,.6 | DIP28,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL |
| power supply | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) |
| Maximum standby current | 0.02 A | 0.02 A | 0.02 A |
| Minimum standby current | 4.5 V | 4.5 V | 4.5 V |
| Maximum slew rate | 0.1 mA | 0.1 mA | 0.1 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL |
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