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MR810

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size55KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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MR810 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-41,

MR810 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
Maximum reverse recovery time0.75 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

MR810 Related Products

MR810 MR816 MR814 MR811 MR812 MR817
Description Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-41,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
JEDEC-95 code DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 2 A 2 A 2 A 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 50 V 600 V 400 V 100 V 200 V 800 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.75 µs 0.75 µs 0.75 µs 0.75 µs 0.75 µs 0.75 µs
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

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