MR812 datasheet, PDF - EEWORLD Datasheet

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MR812: DescriptionRectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-41,; CategoryDiscrete semiconductor diode; File Size55KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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MR812 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-41,

MR812 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JEDEC-95 code	DO-41
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.75 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

MR812 Related Products

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Description	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Phase, 1 Element, 2A, 600V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Phase, 1 Element, 2A, 50V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-41,	Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-41,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
JEDEC-95 code	DO-41	DO-41	DO-41	DO-41	DO-41	DO-41
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	2 A	2 A	2 A	2 A	2 A	2 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	600 V	400 V	50 V	100 V	800 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.75 µs	0.75 µs	0.75 µs	0.75 µs	0.75 µs	0.75 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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