EDO DRAM Module, 1MX40, 80ns, CMOS, SIMM-72
Parameter Name | Attribute value |
Maker | LG Semicon Co., Ltd. |
package instruction | SIMM-72 |
Reach Compliance Code | unknown |
access mode | FAST PAGE WITH EDO |
Maximum access time | 80 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
I/O type | COMMON |
JESD-30 code | R-XSMA-N72 |
memory density | 41943040 bit |
Memory IC Type | EDO DRAM MODULE |
memory width | 40 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 72 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX40 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | SIMM |
Encapsulate equivalent code | SSIM72 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 1024 |
Maximum standby current | 0.01 A |
Maximum slew rate | 1.1 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | SINGLE |
GMM7401010CSG-80 | GMM7401010CSG-60 | GMM7401010CS-80 | GMM7401010CS-60 | GMM7401010CS-70 | GMM7401010CSG-70 | |
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Description | EDO DRAM Module, 1MX40, 80ns, CMOS, SIMM-72 | EDO DRAM Module, 1MX40, 60ns, CMOS, SIMM-72 | EDO DRAM Module, 1MX40, 80ns, CMOS, SIMM-72 | EDO DRAM Module, 1MX40, 60ns, CMOS, SIMM-72 | EDO DRAM Module, 1MX40, 70ns, CMOS, SIMM-72 | EDO DRAM Module, 1MX40, 70ns, CMOS, SIMM-72 |
package instruction | SIMM-72 | SIMM-72 | SIMM-72 | SIMM-72 | SIMM-72 | SIMM-72 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
access mode | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
Maximum access time | 80 ns | 60 ns | 80 ns | 60 ns | 70 ns | 70 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 |
memory density | 41943040 bit | 41943040 bit | 41943040 bit | 41943040 bit | 41943040 bit | 41943040 bi |
Memory IC Type | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE |
memory width | 40 | 40 | 40 | 40 | 40 | 40 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 72 | 72 | 72 | 72 | 72 | 72 |
word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
character code | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 1MX40 | 1MX40 | 1MX40 | 1MX40 | 1MX40 | 1MX40 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM |
Encapsulate equivalent code | SSIM72 | SSIM72 | SSIM72 | SSIM72 | SSIM72 | SSIM72 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
Maximum standby current | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
Maximum slew rate | 1.1 mA | 1.3 mA | 1.1 mA | 1.3 mA | 1.2 mA | 1.2 mA |
Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maker | LG Semicon Co., Ltd. | - | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. |