2SC4489S datasheet, PDF - EEWORLD Datasheet

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2SC4489S: Description2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size48KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC4489S Overview

2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN

2SC4489S Parametric

Parameter Name	Attribute value
Objectid	1481158837
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	140
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz

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Ordering number:ENN3096

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1709/2SC4489

High-Voltage Switching Applications

Features

· Adoption of FBET, MBIT processes.

· High breakdown voltage, large current capacity.

· Fast switching speed.

Package Dimensions

unit:mm

2064A

[2SA1709/2SC4489]

2.5

1.45

6.9

1.0

4.5

1.0

0.6

1.0

0.9

0.5

0.45

( ) 2SA1709

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Conditions

2.54

1 : Base

2 : Collector

3 : Emitter

SANYO : NMP

Ratings

(–)120

(–)100

(–)6

(–)2

(–)3

150

–55 to +150

4.0

1.0

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Symbol

ICBO

IEBO

hFE

VCB=(–)100V, IE=0

VEB=(–)4V, IC=0

VCE=(–)5V, IC=(–)100mA

VCE=(–)10V, IC=(–)100mA

100*

120

Conditions

Ratings

min

typ

max

(–)100

400*

MHz

Unit

* : The 2SA1709/2SC4489 are classified by 100mA h

as follows :

Rank

hFE

100 to 200

140 to 280

200 to 400

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

40804TN (PC)/5169MO, TS No.3096–1/5

2SA1709/2SC4489

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of April, 2004. Specifications and information herein are subject to

change without notice.

PS No.3096–5/5

2SC4489S Related Products

	2SC4489S	2SA1709-R	2SA1709-S	2SA1709-T	2SC4489-R	2SC4489-T	2SC4489-S
Description	2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN	2000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN	2000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, NMP, 3 PIN	Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, NMP, 3 PIN	2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN	2000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, NMP, 3 PIN
Objectid	1481158837	1481158618	1481158621	2056377650	2056377653	1481158840	1481158837
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	2 A	2 A	2 A	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	140	100	140	200	100	200	140
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	NPN	PNP	PNP	PNP	NPN	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W	1 W	1 W	1 W	1 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz

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