Ordering number:ENN3096
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1709/2SC4489
High-Voltage Switching Applications
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage, large current capacity.
· Fast switching speed.
Package Dimensions
unit:mm
2064A
[2SA1709/2SC4489]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) 2SA1709
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
1 : Base
2 : Collector
3 : Emitter
SANYO : NMP
Ratings
(–)120
(–)100
(–)6
(–)2
(–)3
1
150
–55 to +150
4.0
1.0
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
100*
120
Conditions
Ratings
min
typ
max
(–)100
(–)100
400*
MHz
Unit
nA
nA
* : The 2SA1709/2SC4489 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40804TN (PC)/5169MO, TS No.3096–1/5
2SA1709/2SC4489
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
Cob
Conditions
IC=(–)1A, IB=(–)100mA
IC=(–)1A, IB=(–)100mA
VCB=(–)10V, f=1MHz
(–)120
(–)100
(–)6
80
(750)
1000
(40)50
Ratings
min
typ
(–0.22)
0.13
(–)0.85
(25)16
max
(–0.6)
0.4
(–)1.2
Unit
V
V
V
pF
V
V
V
ns
ns
ns
ns
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)CEO IE=(–)10µA, IC=0
ton
See specified Test Circuit
tstg
tf
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
IB1
IB2
INPUT
PW=20µs
D.C.≤1%
50Ω
VR
RB
+
100µF
VBE= --5V
+
470µF
VCC=50V
OUTPUT
RL
10IB1= --10IB2= IC=0.7A
(For PNP, the polarity is reversed.)
--2.0
IC -- VCE
2SA1709
A
0m
A
0m
-4
-
A
0m
--3
2.0
IC -- VCE
2SC4489
--2
0mA
1.6
A
50m
--1.6
40mA
30mA
20mA
Collector Current, IC – A
--1.2
--10mA
Collector Current, IC – A
--5
1.2
10mA
5mA
--0.8
--5mA
0.8
--0.4
--3mA
--2mA
3mA
0.4
2mA
--1mA
0
0
1mA
0
--5
0
1
2
3
IB=0
--1
--2
--3
--4
IB=0
4
5
ITR04341
Collector-to-Emitter Voltage, VCE – V
--1.0
ITR04340
1.0
Collector-to-Emitter Voltage, VCE – V
IC -- VCE
--6m
A
--5mA
--4mA
--3mA
--2mA
IC -- VCE
5.0
m
A
4.5m
A
2SA1709
0.8
4.0mA
3.5mA
2SC4489
--0.8
Collector Current, IC – A
Collector Current, IC – A
3.0mA
0.6
--0.6
2.5mA
2.0mA
--0.4
0.4
1.5mA
1.0mA
--1mA
--0.2
0.2
0.5mA
0
0
IB=0
--10
--20
--30
--40
--50
ITR04342
0
0
10
20
30
IB=0
40
50
ITR04343
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.3096–2/5
2SA1709/2SC4489
--2.4
IC -- VBE
2SA1709
VCE= --5V
2.4
IC -- VBE
2SC4489
VCE=5V
--2.0
2.0
Collector Current, IC – A
--1.6
Collector Current, IC – A
1.6
--1.2
1.2
--0.4
Ta=
75
°
C
25
°
C
--25
°
C
--0.8
0.8
0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
ITR04344
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR04345
Base-to-Emitter Voltage, VBE – V
1000
7
5
Base-to-Emitter Voltage, VBE – V
1000
7
5
hFE -- IC
2SA1709
VCE= --5V
hFE -- IC
2SC4489
VCE=5V
DC Current Gain, hFE
3
2
Ta=75°C
25°C
--25°C
DC Current Gain, hFE
3
2
Ta=75
°
C
25
°
C
--25
°
C
100
7
5
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
100
7
5
3
7 0.01
2
3
5
7 0.1
Ta=7
5
°
C
25
°
C
--25
°
C
2
3
5
7 1.0
2
3
Collector Current, IC – A
3
ITR04346
3
f T -- IC
Collector Current, IC – A
ITR04347
f T -- IC
Gain-Bandwidth Product, fT – MHz
2
Gain-Bandwidth Product, fT – MHz
2SA1709
VCE= --10V
2
2SC4489
VCE=10V
100
7
5
100
7
5
3
2
3
2
10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
100
7
ITR04348
100
7
Cob -- VCB
Collector Current, IC – A
ITR04349
Cob -- VCB
2SC4489
f=1MHz
2SA1709
f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
5
5
3
2
3
2
10
7
5
3
7 --1.0
2
3
5
7 --10
2
3
5
10
7
5
3
Collector-to-Base Voltage, VCB --
7 --100
2
ITR04350
V
7
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB --
7 100
2
V
ITR04351
No.3096–3/5
2SA1709/2SC4489
--1000
7
VCE(sat) -- IC
2SA1709
IC / IB=10
1000
7
VCE(sat) -- IC
2SC4489
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
5
3
2
5
3
2
--100
7
5
3
2
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
100
7
5
3
2
C
Ta=75
°
C
25
°
Ta=75
°C
25
°
C
--25
°
C
--25
°
C
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
--10
7
ITR04352
10
VBE(sat) -- IC
Collector Current, IC – A
ITR04353
VBE(sat) -- IC
2SA1709
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
7
5
2SC4489
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) –V
5
3
2
3
2
--1.0
1.0
Ta= --25°C
7
5
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
Ta= --25°C
7
5
3
7 0.01
2
3
5
25
°
C
75
°C
25
°
C
75
°C
7 0.1
2
3
5
7 1.0
2
3
Collector Current, IC – A
5
ITR04354
1.2
ASO
10
0m
Collector Current, IC – A
ITR04355
PC -- Ta
2SA1709 / 2SC4489
3
I =2A
2
C
ICP=3A
s
2SA1709 / 2SC4489
10
1ms
ms
Collector Dissipation, P
C
– W
1.0
Collector Current, IC – A
1.0
5
3
2
0.1
5
3
2
0.01
5
3
DC
0.8
op
era
t
ion
0.6
0.4
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
5
7 1.0
2
3
5
7 10
2
3
5
0.2
0
7 100
2
V
ITR04356
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE –
Ambient Temperature, Ta – ˚C
ITR04357
No.3096–4/5
2SA1709/2SC4489
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
PS No.3096–5/5
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