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70N06_09

Description
70 Amps, 60 Volts N-CHANNEL POWER MOSFET
File Size30KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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70N06_09 Overview

70 Amps, 60 Volts N-CHANNEL POWER MOSFET

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Description 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? - - conform to conform to conform to conform to conform to conform to conform to conform to
Maker - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - - D2PAK TO-220AB D2PAK TO-220AB TO-262AA D2PAK D2PAK TO-262AA
package instruction - - SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts - - 4 3 4 3 3 4 4 3
Reach Compliance Code - - compli compli compli compli compli compli compli compli
ECCN code - - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - - 600 mJ 600 mJ 600 mJ 600 mJ 600 mJ 600 mJ 600 mJ 600 mJ
Configuration - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - - 60 V 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) - - 70 A 70 A 70 A 70 A 70 A 70 A 70 A 70 A
Maximum drain-source on-resistance - - 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω
FET technology - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - - TO-263AB TO-220AB TO-263AB TO-220AB TO-262AA TO-263AB TO-263AB TO-262AA
JESD-30 code - - R-PSSO-G2 R-PSFM-T3 R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3
Number of components - - 1 1 1 1 1 1 1 1
Number of terminals - - 2 3 2 3 3 2 2 3
Operating mode - - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - - SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT IN-LINE SMALL OUTLINE SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - - 280 A 280 A 280 A 280 A 280 A 280 A 280 A 280 A
surface mount - - YES NO YES NO NO YES YES NO
Terminal form - - GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
Terminal location - - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications - - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - - SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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