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70N06

Description
70 Amps, 60 Volts N-CHANNEL POWER MOSFET
File Size30KB,2 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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70N06 Overview

70 Amps, 60 Volts N-CHANNEL POWER MOSFET

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Description 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to - conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD - - - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code - D2PAK TO-220AB D2PAK TO-220AB TO-262AA D2PAK - D2PAK TO-262AA
package instruction - SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 - SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts - 4 3 4 3 3 4 - 4 3
Reach Compliance Code - compli compli compli compli compli compli - compli compli
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 600 mJ 600 mJ 600 mJ 600 mJ 600 mJ 600 mJ - 600 mJ 600 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 60 V 60 V 60 V 60 V 60 V 60 V - 60 V 60 V
Maximum drain current (ID) - 70 A 70 A 70 A 70 A 70 A 70 A - 70 A 70 A
Maximum drain-source on-resistance - 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω 0.015 Ω - 0.015 Ω 0.015 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-263AB TO-220AB TO-263AB TO-220AB TO-262AA TO-263AB - TO-263AB TO-262AA
JESD-30 code - R-PSSO-G2 R-PSFM-T3 R-PSSO-G2 R-PSFM-T3 R-PSIP-T3 R-PSSO-G2 - R-PSSO-G2 R-PSIP-T3
Number of components - 1 1 1 1 1 1 - 1 1
Number of terminals - 2 3 2 3 3 2 - 2 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE FLANGE MOUNT IN-LINE SMALL OUTLINE - SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 280 A 280 A 280 A 280 A 280 A 280 A - 280 A 280 A
surface mount - YES NO YES NO NO YES - YES NO
Terminal form - GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING - GULL WING THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON SILICON SILICON - SILICON SILICON

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