70 Amps, 60 Volts N-CHANNEL POWER MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD |
| Parts packaging code | D2PAK |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 600 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 70 A |
| Maximum drain-source on-resistance | 0.015 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 280 A |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| 70N06L-TQ2-T | 70N06 | 70N06G-TQ2-T | 70N06G-TA3-T | 70N06L-TA3-T | 70N06G-T2Q-T | 70N06L-TQ2-R | 70N06_09 | 70N06G-TQ2-R | 70N06L-T2Q-T | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| Is it Rohs certified? | conform to | - | conform to | conform to | conform to | conform to | conform to | - | conform to | conform to |
| Maker | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - | - | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| Parts packaging code | D2PAK | - | D2PAK | TO-220AB | TO-220AB | TO-262AA | D2PAK | - | D2PAK | TO-262AA |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | - | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | - | SMALL OUTLINE, R-PSSO-G2 | IN-LINE, R-PSIP-T3 |
| Contacts | 4 | - | 4 | 3 | 3 | 3 | 4 | - | 4 | 3 |
| Reach Compliance Code | compli | - | compli | compli | compli | compli | compli | - | compli | compli |
| ECCN code | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 600 mJ | - | 600 mJ | 600 mJ | 600 mJ | 600 mJ | 600 mJ | - | 600 mJ | 600 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V | - | 60 V | 60 V |
| Maximum drain current (ID) | 70 A | - | 70 A | 70 A | 70 A | 70 A | 70 A | - | 70 A | 70 A |
| Maximum drain-source on-resistance | 0.015 Ω | - | 0.015 Ω | 0.015 Ω | 0.015 Ω | 0.015 Ω | 0.015 Ω | - | 0.015 Ω | 0.015 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | - | TO-263AB | TO-220AB | TO-220AB | TO-262AA | TO-263AB | - | TO-263AB | TO-262AA |
| JESD-30 code | R-PSSO-G2 | - | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 | - | R-PSSO-G2 | R-PSIP-T3 |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| Number of terminals | 2 | - | 2 | 3 | 3 | 3 | 2 | - | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | - | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | IN-LINE | SMALL OUTLINE | - | SMALL OUTLINE | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 280 A | - | 280 A | 280 A | 280 A | 280 A | 280 A | - | 280 A | 280 A |
| surface mount | YES | - | YES | NO | NO | NO | YES | - | YES | NO |
| Terminal form | GULL WING | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON |
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