MASMBJP6KE27E3 datasheet, PDF - EEWORLD Datasheet

MASMBJP6KE27E3: DescriptionTrans Voltage Suppressor Diode, 600W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN; CategoryDiscrete semiconductor diode; File Size561KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MASMBJP6KE27E3 Overview

Trans Voltage Suppressor Diode, 600W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

Parameter Name	Attribute value
Maker	Microsemi
package instruction	R-PDSO-C2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	29.7 V
Minimum breakdown voltage	24.3 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.38 W
Maximum repetitive peak reverse voltage	21.8 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL

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