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2SD822

Description
TRANSISTOR 7 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size45KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SD822 Overview

TRANSISTOR 7 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power

2SD822 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
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