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2SD2150T100/Q

Description
3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size75KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SD2150T100/Q Overview

3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD2150T100/Q Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PSSO-F3
JESD-609 codee2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)290 MHz
VCEsat-Max0.5 V
Base Number Matches1

2SD2150T100/Q Related Products

2SD2150T100/Q 2SD2150T100/RS 2SD2150T100RS 2SD2150T100Q 2SD2150T100/QS 2SD2150T100/QR 2SD2150T100QS 2SD2150T100QR
Description 3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR 3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR 3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon,
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code compli compli compli compli compli compli compli compli
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 180 180 120 120 120 120 120
JESD-30 code R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3
JESD-609 code e2 e2 e2 e2 e2 e2 e2 e2
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES YES YES
Terminal surface TIN COPPER TIN COPPER TIN COPPER TIN COPPER TIN COPPER TIN COPPER TIN COPPER TIN COPPER
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 10 10 10 10 10 10 10 10
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 290 MHz 290 MHz 290 MHz 290 MHz 290 MHz 290 MHz 290 MHz 290 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1 1 1 1 1 1
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