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PMWD19UN

Description
TRANSISTOR 3400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153, PLASTIC, TSSOP-8, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size244KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PMWD19UN Overview

TRANSISTOR 3400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153, PLASTIC, TSSOP-8, FET General Purpose Small Signal

PMWD19UN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTSSOP
package instructionPLASTIC, TSSOP-8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)5.6 A
Maximum drain current (ID)3.4 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-153
JESD-30 codeR-PDSO-G8
Humidity sensitivity level2
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PMWD19UN
Dual
µTrenchMOS™
ultra low level FET
Rev. 01 — 20 December 2002
M3D647
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMWD19UN in SOT530-1 (TSSOP8).
1.2 Features
s
Surface mounting package
s
Very low threshold
s
Low profile
s
Fast switching.
1.3 Applications
s
Portable appliances
s
Battery management
s
PCMCIA cards
s
Load switching.
1.4 Quick reference data
s
V
DS
30 V
s
P
tot
2.3 W
s
I
D
5.6 A
s
R
DSon
23 mΩ.
2. Pinning information
Table 1:
Pin
1
2,3
4
5
6,7
8
Pinning - SOT530-1, simplified outline and symbol
Description
drain1 (d1)
source1 (s1)
gate1 (g1)
gate2 (g2)
source2 (s2)
drain2 (d2)
1
Top view
4
MBK885
Simplified outline
8
5
Symbol
d1
d2
s1
g1
s2
g2
MSD901
SOT530-1

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