LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
BCW72LT1
3
1
BASE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
100
2
EMITTER
1
2
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BCW72LT1 = K2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 2.0mAdc, V
EB
= 0 )
Collector–Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, V
EB
= 0 )
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
(V
CB
= 20 Vdc, I
E
= 0, T
A
=100°C )
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
V
(BR)CEO
45
—
—
Vdc
V
(BR)CES
45
—
—
Vdc
V
(BR)CBO
50
—
—
Vdc
5.0
—
—
Vdc
I
CBO
—
—
—
—
100
10
nAdc
µAdc
M14–1/6
LESHAN RADIO COMPANY, LTD.
BCW72LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
( I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc )
Collector–Emitter Saturation Voltage
( I
C
= 10 mAdc, I
B
= 0.5 mAdc )
( I
C
= 50 mAdc, I
B
= 2.5 mAdc )
Base–Saturation Voltage
( I
C
= 50 mAdc, I
B
= 2.5 mAdc )
Base–Emitter On Voltage
(I
C
= 2.0 mAdc, V CE = 5.0 Vdc)
h
FE
V
CE(sat)
—
—
V
BE(on)
V
BE(on)
—
0.6
—
0.21
0.85
—
0.25
—
—
0.75
Vdc
Vdc
200
—
450
—
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
( V
CB
= 10 Vdc,I
E
= 0, f = 1.0 MHz)
Input Capacitance
f
T
C
obo
—
—
—
—
300
—
9.0
—
—
4.0
—
10
MHz
pF
pF
dB
C
ibo
(I
E
= 0, V
CB
= 10 Vdc, f = 1.0 MHz)
Noise Figure
NF
( I
C
= 0.2 mAdc, V
CE
= 5.0 Vdc, R
S
= 2.0
kΩ,
f = 1.0 kHz, BW = 200 Hz )
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+3.0 V
t
1
+3.0 V
300 ns
DUTY CYCLE = 2%
– 0.5 V
<1.0 ns
+10.9 V
10 < t
1
< 500
µs
275
10 k
DUTY CYCLE = 2%
0
– 9.1 V
+10.9 V
275
10 k
C
S
< 4.0 pF*
1N916
<1.0 ns
C
S
< 4.0 pF*
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
M14–2/6
LESHAN RADIO COMPANY, LTD.
BCW72LT1
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
20
100
I
C
=1.0 mA
e
n
, NOISE VOLTAGE (nV)
BANDWIDTH = 1.0 Hz
R
S
~ 0
~
50
20
I
C
=1.0mA
300µA
BANDWIDTH = 1.0 Hz
R ~
~
S
300µA
10
I
n
, NOISE CURRENT (pA)
10
5.0
2.0
1.0
0.5
0.2
0.1
10
20
50
100
200
500
100µA
7.0
5.0
100µA
3.0
10µA
30µA
30µA
10µA
1.0k
2.0k
5.0k
10 k
2.0
10
20
50
100
200
500 1.0k
2.0k
5.0k
10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500k
200k
BANDWIDTH = 1.0 Hz
1.0M
500k
BANDWIDTH = 1.0 Hz
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
10
20
30
50
70 100
200
300
500 700 1.0K
R
S
, SOURCE RESISTANCE (
Ω
)
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
500 700 1.0K
2.0 dB
3.0 dB 4.0dB
6.0 dB
10 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
I
C
, COLLECTOR CURRENT (µA)
I
C
, COLLECTOR CURRENT (µA)
Figure 5. Narrow Band, 100 Hz
500k
Figure 6. Narrow Band, 1.0 kHz
R
S
, SOURCE RESISTANCE (
Ω
)
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
10
20
30
50
70
100
200
10 Hz to 15.7KHz
Noise Figure is Defined as:
NF = 20 log
10
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
300
500 700 1.0K
( –––––––––––––––)
4KTR
S
e
n 2
+4KTR
S
+I
n2
R
S2
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
–23
j/ °K)
T = Temperature of the Source Resistance ( °K)
R
s
= Source Resistance (
Ω
)
I
C
, COLLECTOR CURRENT (µA)
Figure 7. Wideband
8
M14–3/6
LESHAN RADIO COMPANY, LTD.
BCW72LT1
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
h
FE
, DC CURRENT GAIN
200
25°C
100
80
60
– 55°C
V
CE
= 1.0 V
V
CE
= 10 V
0.02 0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
40
0.0040.006 0.01
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
1.0
100
T
J
= 25°C
0.8
80
T
A
= 25°C
PULSE WIDTH =300
µs
DUTY CYCLE<2.0%
I
B
= 500
µA
400
µA
300
µA
0.6
I
C
= 1.0 mA
10 mA
50 mA
100 mA
60
200
µA
40
0.4
100
µA
20
0.2
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
0
0
5.0
10
15
20
25
30
35
40
I
B
, BASE CURRENT (mA)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Saturation Region
1.4
Figure 10. Collector Characteristics
θ
V
, TEMPERATURE COEFFICIENTS (mV/°C)
1.6
T
J
= 25°C
1.2
*APPLIES for I
C
/ I
B
< h
FE
/ 2
0.8
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
∗ θ
VC
for V
CE(sat)
25°C to 125°C
–55°C to 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
–0.8
25°C to 125°C
–1.6
V
CE(sat)
@ I
C
/I
B
= 10
θ
VB
for V
BE
–55°C to 25°C
–2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
Figure 12. Temperature Coefficients
M14–4/6
LESHAN RADIO COMPANY, LTD.
BCW72LT1
TYPICAL DYNAMIC CHARACTERISTICS
300
200
100
70
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
1000
700
500
300
200
t
s
t, TIME (ns)
30
20
10
7.0
5.0
3.0
1.0
2.0
3.0
5.0
7.0
10
t
f
t
d
@V
BE(off)
= 0.5 Vdc
t, TIME (ns)
50
100
70
50
30
20
10
t
f
V
CC
= 3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
30
50
70
100
I
C
, COLLECTOR CURRENT (mA)
f
T
, CURRENT– GAIN BANDWIDTH PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Turn–On Time
500
10.0
Figure 14. Turn–Off Time
300
T
J
= 25°C
f=100MHz
V
CE
=20 V
C, CAPACITANCE (pF)
7.0
5.0
T
J
= 25°C
f =1.0MHz
C
ib
C
ob
200
5.0 V
3.0
100
2.0
70
50
0.5
1.0
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 15. Current–Gain — Bandwidth Product
h
oe
, OUTPUT ADMITTANCE (
µmhos
)
20
200
100
70
50
Figure 16. Capacitance
h
ie
, INPUT IMPEDANCE ( kΩ )
10
7.0
5.0
3.0
2.0
h
fe
~
200 @ I
C
= 1.0 mA
~
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
V
CE
= 10 Vdc
f = 1.0 kHz
T
A
= 25°C
h
fe
~
200 @ I
C
= 1.0 mA
~
30
20
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. Input Impedance
Figure 18. Output Admittance
M14–5/6
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