BCX29 datasheet, PDF - EEWORLD Datasheet

BCX29: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,; CategoryDiscrete semiconductor The transistor; File Size60KB，1 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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BCX29 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

Parameter Name	Attribute value
Maker	Micro Electronics
Reach Compliance Code	unknown
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

	BCX29	BC532	BCX27
Description	Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,	Small Signal Bipolar Transistor, 0.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Maker	Micro Electronics	Micro Electronics	Micro Electronics
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.2 A	0.1 A	0.2 A
Collector-emitter maximum voltage	100 V	140 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	60	70
JEDEC-95 code	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.625 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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