Small Signal Bipolar Transistor, 0.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
Parameter Name | Attribute value |
Maker | Micro Electronics |
package instruction | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code | unknown |
Maximum collector current (IC) | 0.2 A |
Collector-emitter maximum voltage | 80 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 70 |
JEDEC-95 code | TO-92 |
JESD-30 code | O-PBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 0.35 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 100 MHz |
BCX27 | BCX29 | BC532 | |
---|---|---|---|
Description | Small Signal Bipolar Transistor, 0.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
Maker | Micro Electronics | Micro Electronics | Micro Electronics |
Reach Compliance Code | unknown | unknown | unknown |
Maximum collector current (IC) | 0.2 A | 0.2 A | 0.1 A |
Collector-emitter maximum voltage | 80 V | 100 V | 140 V |
Configuration | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 70 | 70 | 60 |
JEDEC-95 code | TO-92 | TO-92 | TO-92 |
JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 0.35 W | 0.35 W | 0.625 W |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
Terminal form | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM |
Transistor component materials | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 100 MHz | 100 MHz | 100 MHz |