K4M561633G-RG75 datasheet, PDF

K4M561633G-RG75: DescriptionSynchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54; Categorystorage storage; File Size114KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4M561633G-RG75 Overview

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, FBGA-54

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	VFBGA, BGA54,9X9,32
Reach Compliance Code	unknown
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B54
length	11 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	225
power supply	3/3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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