Photodiode-Chip
Preliminary
Wavelength range
Infrared
1350
Ø1000
EPC-1300-1.0
11.04.2007
Type
Planar
Technology
InGaAs/InP
rev. 04/06
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
330 µm
anode
bond gold 1.0 µm
cathode
gold alloy, 0.5 µm
Ø150
PD-09
Description
Infrared-selective photo-
diode with response range
in the NIR-region
(850 - 1700 nm)
Applications
Optical communications,
safety equipment, light
barriers
Ø150
Miscellaneous Parameters
T
amb
= 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Temperature coefficient of I
D
T = -40…120°C
Test
сonditions
Symbol
A
T
amb
T
stg
TC
ID
Value
0.78
-40 to +125
-40 to +125
4.7
Unit
mm²
°C
°C
%/K
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Sensitivity range at 20 %
Spectral bandwidth at 50 %
Responsivity at 1300 nm
1
Dark current
Dark resistance
Breakdown voltage
Forward voltage
Junction capacitance
1
Symbol
λ
∆λ
0,5
S
λ
I
D
R
D
V
R
V
F
C
J
Min
850
Typ
Max
1700
Unit
nm
nm
A/W
V
R
= 0
V
R
= 0 V
V
R
= 0 V
V
R
= 5 V
V
R
= 10 mV
I
R
= 10 µA
I
F
= 10 mA
V
R
= 0 V
680
0.9
0.5
15
30
42
0.6
130
10.0
nA
MΩ
V
V
pF
Measured on bare chip on TO-18 header
Typ. I
D
[pA]
Typ. S
λ
[A/W]
Labeling
Type
EPС-1300-1.0
Lot N°
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with
EPIGAP
equipment
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
1 of 2
Photodiode-Chip
Preliminary
11.04.2007
EPC-1300-1.0
rev. 04/06
Typical Optical Responsivity (A/W)
1,0
0,8
0,6
0,4
0,2
0,0
400
600
800
1000
1200
1400
1600
1800
Wavelength [nm]
Ambient Temperature vs. dark current
100
dark current (nA)
10
T
K
= 0.074 1/K
1
20
40
60
80
100
120
Ambient Temperature (°C)
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
2 of 2
Integrated technical exchanges
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