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2N5136

Description
TRANSISTOR,BJT,NPN,20V V(BR)CEO,800MA I(C),TO-105
CategoryDiscrete semiconductor    The transistor   
File Size82KB,2 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
Stay tuned Parametric

2N5136 Overview

TRANSISTOR,BJT,NPN,20V V(BR)CEO,800MA I(C),TO-105

2N5136 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompli
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)20
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.22 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)40 MHz
Base Number Matches1
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