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JANHCA1N750A

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size76KB,21 Pages
ManufacturerCompensated Devices Inc.
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Zener Diode,

JANHCA1N750A Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
Reach Compliance Codeunknown
Diode typeZENER DIODE
Certification statusNot Qualified
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 3 August 2004.
INCH-POUND
MIL-PRF-19500/127P
3 May 2004
SUPERSEDING
MIL-PRF-19500/127N
09 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH
1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1
THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1,
1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH
1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance is provided for each
unencapsulated device .
1.2 Physical dimensions. See 3.4 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures
3 and 4 for die.
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9) herein and
as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C. -65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
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