OPA2330AIDRG4 datasheet, PDF - EEWORLD Datasheet

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OPA2330AIDRG4: Description1.8V, 35μA, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125; CategoryAnalog mixed-signal IC Amplifier circuit; File Size2MB，54 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance; Related ProductsFound20parts with similar functions to OPA2330AIDRG4

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OPA2330AIDRG4 Overview

1.8V, 35μA, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125

OPA2330AIDRG4 Parametric

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Texas Instruments
Parts packaging code	SOIC
package instruction	SOP, SOP8,.25
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Factory Lead Time	6 weeks
Samacsys Descripti	CMOS OPERATIONAL AMPLIFIERS
Amplifier type	OPERATIONAL AMPLIFIER
Architecture	VOLTAGE-FEEDBACK
Maximum average bias current (IIB)	0.0005 µA
Maximum bias current (IIB) at 25C	0.0005 µA
Minimum Common Mode Rejection Ratio	100 dB
Nominal Common Mode Rejection Ratio	115 dB
frequency compensation	YES
Maximum input offset current (IIO)	0.001 µA
Maximum input offset voltage	50 µV
JESD-30 code	R-PDSO-G8
JESD-609 code	e4
length	8.65 mm
low-bias	YES
low-dissonance	YES
micropower	YES
Humidity sensitivity level	1
Number of functions	2
Number of terminals	8
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
method of packing	TR
Peak Reflow Temperature (Celsius)	260
power	NO
power supply	+-0.9/+-2.75/1.8/5.5 V
Programmable power	NO
Certification status	Not Qualified
Maximum seat height	1.75 mm
Nominal slew rate	0.16 V/us
Maximum slew rate	0.07 mA
Supply voltage upper limit	7 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Nominal Uniform Gain Bandwidth	350 kHz
Minimum voltage gain	100000
broadband	NO
width	3.9 mm

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OPA2330AIDRG4 Similar Products

Part Number	Manufacturer	Description
OPA2330AIDR	Texas Instruments(德州仪器)	增益带宽积（GBP）：350kHz 放大器组数：2 运放类型：Zero-Drift 各通道功耗：21uA 压摆率（SR）：0.16 V/us 电源电压：1.8V ~ 5.5V, ±0.9V ~ 2.75V
OPA2330AID	Texas Instruments(德州仪器)	1.8V, 35μA, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125
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OPA2333HD	Texas Instruments(德州仪器)	High Temperature 1.8-V Micropower CMOS Operational Amplifier Zero-Drift Series 8-SOIC -55 to 175
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ISL28214FBZ	Renesas(瑞萨电子)	Dual General Purpose Micropower, RRIO Operational Amplifiers; MSOP8, SOIC8, SOT8; Temp Range: -40° to 125°C
BU7242SF-E2	ROHM(罗姆半导体)	Operational Amplifiers - Op Amps Low Voltage 1.8-5.5V 10mA; 0.4 slew rate
OPA2322AIDR	Texas Instruments(德州仪器)	20MHz, Low Noise, 1.8V RRIO, CMOS Operational Amplifier 8-SOIC -40 to 125
BU7262F-E2	ROHM(罗姆半导体)	Operational Amplifiers - Op Amps Low Voltage 1.8-5.5V 10mA; 1.1 slew rate
ISL28230CBZ-T7	Renesas(瑞萨电子)	Dual Micropower, Low Drift, RRIO Operational Amplifier; DFN8, MSOP8, SOIC8; Temp Range: See Datasheet
BU7242F	ROHM(罗姆半导体)	DUAL OP-AMP, 10000 uV OFFSET-MAX, 0.9 MHz BAND WIDTH, PDSO8
BU7262SF	ROHM(罗姆半导体)	DUAL OP-AMP, 10000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO8

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