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GBL205HX0G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size197KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

GBL205HX0G Overview

Bridge Rectifier Diode,

GBL205HX0G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PSIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
GBL201 - GBL207
Taiwan Semiconductor
CREAT BY ART
2A, 50V - 1000V Glass Passivated Single Phase Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength
- Typical I
R
less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
+
~
~ –
GBL
MECHANICAL DATA
Case:
GBL
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
2.0 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated V
R
Typical junction capabitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C.
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
θJL
R
θJA
T
J
T
STG
GBL
201
50
35
50
GBL
202
100
70
100
GBL
203
200
140
200
GBL
204
400
280
400
2
60
14.9
1.0
5
500
25
13
32
- 55 to +150
- 55 to +150
GBL
205
600
420
600
GBL
206
800
560
800
GBL
207
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
pF
°C/W
°C
°C
Document Number: DS_D1408054
Version: I15
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