Ordering number : EN1720B
2SA1415 / 2SC3645
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1415 / 2SC3645
Features
•
•
•
•
•
High-Voltage Switching,
Predriver Applications
Adoption of FBET process.
High breakdown voltage (VCEO=160V).
Excellent linearity of hFE and small Cob.
Fast switching speed.
Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.
Specifications
( ) : 2SA1415
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Moutned on ceramic board (250mm
2
✕0.8mm)
Conditions
Ratings
(-
-)180
(-
-)160
(-
-)5
(-
-)140
(-
-)200
500
1.3
150
--55 to +150
Unit
V
V
V
mA
mA
mW
W
°C
°C
Marking : 2SA1415 : AA, 2SC3645: CA
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
80608CB TI IM TA-4017, 4212 / O3103TN (KT)/71598HA (KT)/3277KI/2145MW, TS No.1720-1/5
2SA1415 / 2SC3645
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Strage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
ton
tstg
tf
Conditions
VCB=(--)80V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(-
-)10mA
VCE=(--)10V, IC=(--)10mA
VCB=(--)10V, f=1MHz
IC=(--)50mA, IB=(--)5mA
See sepcified Test Circuit.
See sepcified Test Circuit.
See sepcified Test Circuit.
140*
150
(4.0)3.0
(--0.14)0.07
0.1
1.5
0.1
(--0.4)0.3
Ratings
min
typ
max
(-
-)100
(-
-)100
400*
MHz
pF
V
μs
μs
μs
Unit
nA
nA
*
: The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
Rank
S
T
hFE
140 to 280
200 to 400
Package Dimensions
unit : mm (typ)
7007A-004
Top View
4.5
1.6
1.5
Switching Time Test Circuit
IB1
3kΩ
IN
5kΩ
50Ω
+
+
1μF
20V
2kΩ
IB2
OUT
2.5
1.0
4.0
1μF
--2V
1
0.4
0.5
1.5
2
3
0.4
IC=10IB1=--10IB2=10mA
For PNP, the polarity is reversed.
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
--140
IC -- VCE
2SA1415
mA
140
IC -- VCE
0.6
mA
--120
120
m
0.5
A
2SC3645
Collector Current, IC -- mA
--100
--0.4
mA
--0.3m
Collector Current, IC -- mA
.6
--0
mA
--0.5
A
0.4m
0.3mA
100
A
--80
80
--60
--0.2mA
60
0.2mA
--40
40
--0.1mA
--20
0.1mA
20
0
0
IB=0mA
--10
--20
--30
--40
--50
--60
--70
0
IB=0mA
0
10
20
30
40
50
60
70
Collector-to-Emitter Voltage, VCE -- V
ITR03510
Collector-to-Emitter Voltage, VCE -- V
ITR03511
No.1720-2/5
2SA1415 / 2SC3645
--140
IC -- VBE
2SA1415
140
IC -- VBE
2SC3645
--120
120
Collector Current, IC -- mA
Collector Current, IC -- mA
--
0.2
--
0.4
--
0.6
--
0.8
Base-to-Emitter Voltage, VBE -- V
--
1.0
ITR03512
--100
100
--80
80
--60
60
--40
40
--20
20
0
0
0
0
0.2
0.4
0.6
0.8
1.0
ITR03513
1000
7
5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
7
5
hFE -- IC
2SA1415
VCE=--5V
2SC3645
VCE=5V
DC Current Gain, hFE
DC Current Gain, hFE
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
2
3
2
3
2
100
7
5
3
2
100
7
5
3
2
10
5
7
--
1.0
--
100
10
5
7 1.0
2
3
5
7
10
2
3
5
ITR03514
3
Collector Current, IC -- mA
7 100
2
ITR03515
3
f T -- IC
f T -- IC
2SC3645
VCE=10V
Gain-Bandwidth Product, f T -- MHz
2
Gain-Bandwidth Product, f T -- MHz
2SA1415
VCE=--10V
2
100
7
5
100
7
5
3
2
3
2
10
--
1.0
2
3
2
3
5
--
10
Collector Current, IC -- mA
5
7
7
--
100
2
10
1.0
2
3
5
7
10
2
3
5
ITR03516
100
100
7
Cob -- VCB
Collector Current, IC -- mA
7 100
2
ITR03517
Cob -- VCB
Output Capacitance, Cob -- pF
3
2
Output Capacitance, Cob -- pF
5
2SA1415
f=1MHz
7
5
3
2
2SC3645
f=1MHz
10
7
5
3
2
10
7
5
3
2
1.0
--
1.0
2
2
3
5
7
--
100
--
10
Collector-to-Base Voltage, VCB -- V
ITR03518
3
5
7
1.0
1.0
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
7 100
ITR03519
No.1720-3/5
2SA1415 / 2SC3645
2
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
--
1.0
7
5
3
2
2SA1415
IC / IB=10
1.0
7
5
3
2
VCE(sat) -- IC
2SC3645
IC / IB=10
0.1
7
5
3
2
--
0.1
7
5
3
2
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
5
7 1.0
2
3
5
7 10
2
3
5
ITR03520
10
7
--
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
7 100
2
ITR03521
VCE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
Base-to-Emitter
Saturation Voltage, VCE(sat) -- V
2SA1415
IC / IB=10
2SC3645
IC / IB=10
5
3
2
3
2
--
1.0
7
5
1.0
7
5
3
5
7
--
1.0
2
2
3
5
--
10
Collector Current, IC -- mA
3
5
7
7
--
100
2
3
5
7 1.0
2
3
5
7
10
2
3
5
ITR03522
1.6
5
3
2
ASO
Collector Current, IC -- mA
7 100
2
ITR03071
PC -- Ta
2SA1415 / 2SC3645
ICP=200mA
Collector Dissipation, PC -- W
1.4
2SA1415 / 2SC3645
Mounted on ceramic board (250mm
2
✕0.8mm)
Collector Current, IC -- mA
100
7
5
3
2
10
7
5
3
2
1.0
IC=140mA
DC
10
1.3
1.2
1.0
0.8
0.6
0.4
0.2
0
s
1m
0m
s
op
era
tio
n
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
Mounted on ceramic board (250mm
2
✕0.8mm)
2
3
5
7
10
2
3
5
7 100
2
3
1.0
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
0.6
IT13954
Ambient Temperature, Ta --
°C
IT13955
PC -- Ta
2SA1415 / 2SC3645
Collector Dissipation, PC -- W
0.5
0.4
No
0.3
he
a
ts
in
k
0.2
0.1
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT13956
No.1720-4/5
2SA1415 / 2SC3645
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of August, 2008. Specifications and information herein are subject
to change without notice.
PS No.1720-5/5
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