PZT2907A
Elektronische Bauelemente
PNP Silicon
Silicon Planar Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-223
The PZT2907A is designed for general purpose amplifier
and high-speed switching, medium power switching applications.
MARKING
Collector
2907A
B
C
E
= Date code
Base
REF.
Millimeter
Min.
Max.
6.30
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.60 REF.
0.60
0.80
0.02
0.10
10
°
0
°
REF.
G
H
J
K
L
M
N
Millimeter
Min.
Max.
0.02
0.10
1.50
2.00
0.25
0.35
0.85
1.05
2.30 REF.
2.90
3.10
13 TYP.
Emitter
A
B
C
D
E
F
I
O
MAXIMUM RATINGS
(T
A
=25
°C,
unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
STG
Value
-60
-60
-5
-600
1.5
+150, -55 ~ +150
Unit
V
V
V
mA
W
℃
ELECTRICALCHARACTERISTICS
(T
A
=25
°C
unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown
Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Emitter Cut - Off Current
Collector - Emitter Saturation Voltage
Base - Emitter Voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(sat)
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
f
T
C
OB
Min.
-60
-60
-5
-
-
-
-
-
-
75
100
100
100
50
200
-
Typ.
-
-
-
-
-
-0.2
-0.5
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-10
-50
-0.4
-1.6
-1.3
-2.6
-
-
-
300
-
-
8
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
I
C
= -10uA
I
C
= -10mA
I
C
= -10uA
V
CB
= -50V
V
CE
= -30V, V
BE
= -0.5V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -10V, I
C
= -100 uA
V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -150mA
V
CE
= -10V, I
C
= -500mA
V
CB
= -20V, I
C
= -50mA,
f =100 MHz
V
CB
= -10 V, f = 1 MHz
DC Current Gain
Transition Frequency
Collector Output Capacitance
MHz
pF
*Pulse Test:Pulse width
≦
380 us, Duty cycle
≦
2 %
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-May-2010 Rev. B
Page 1 of 2
PZT2907A
Elektronische Bauelemente
PNP Silicon
Silicon Planar Medium Power Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
31-May-2010 Rev. B
Page 2 of 2