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2N4258A

Description
Trans GP BJT PNP 12V 0.05A
CategoryDiscrete semiconductor    The transistor   
File Size44KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

2N4258A Overview

Trans GP BJT PNP 12V 0.05A

2N4258A Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)700 MHz
Base Number Matches1
, fi
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 378-8960
2M258
2M258A
JEDEC TO-106
PNA258
PN1+258A
JEDEC TO-92
PNP S I L I C O N S W I T C H I N G TRANSISTOR
MAXIMUM RATINGS(T
f l
=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col lector Current
Power Dissipation
Operating and Storage
Junction Temperature
V
CBO
V
CES
UNIT
VCEO
U
EBO
12
12
12
50
625
12
12
12
k.S
50
V
V
V
V
mA
2N4258,A
310
mW
°C
T
J'
T
stg
-65 TO +150
2N/PN4258
MIN
MAX
10
-
12
12
12
*».5
ELECTRICAL CHARACTERISTICS (T
ft
=25°C)
SYMBOL
'CES
IB
BV
C
BO
BVppc
BV
CEO
BV
EBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
VBE(SAT)
hFE
TEST CONO ITIONS
V
CE
=6.0V
V
CE
=6.0V,
v
BE
=o
l
c
=100yA
l
c
=100uA
l
c
=3.0mA
1
E
=100viA
IC=10mA,
I
B
=1 .OmA
lQ=50mA,
l
c
=10mA,
1
g=1 -OmA
l
c
=50mA !
B
=5.0mA
Vp
E
=0.5V,
l
c
=1 .OmA
2N/PN1»258A
MIN
MAX
10
1
.0
12
12
12
k
.5
0.15
0.5
0.95
1.5
120
3-0
3-5
15
20
20
0.75
15
0.75
15
30
30
700
0.15
0.5
0-95
1.5
120
UNIT
nA
nA
V
V
V
V
V
V
V
V
v
CE
=3.ov,
HFE
fj
Cob
Cjb
r
on
toff
l
c
=10mA
I c=50mA
V
CE
=1.0V,
30
30
V
CE
=IOV,
|
c
=10mA, f=100MHz
700
VQ
B
=5.0V,
f=T»OkHz
V
EB
=0.5V,
f=UOkHz
l
c
=10mA,
I
B
1 = 1 .OmA
l
c
=10mA,
I
B
1 = I B 2 = 1 .OmA
IC=10mA,
lB1=l
B
2
= l 0 m A
MHz
3.0
3.5
15
18
15
pr
pr
ns
ns
ns
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information ftimished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility
for
any errors or omissions discov<ta?d in its use. NI
Semi-Conductors encourages customers to verify fhat datasheets are current before plncing orders.

2N4258A Related Products

2N4258A 2N4258 PN4258A PN4258
Description Trans GP BJT PNP 12V 0.05A Trans GP BJT PNP 12V 0.05A Trans GP BJT PNP 12V 0.05A 3-Pin TO-92 Trans GP BJT PNP 12V 0.05A 3-Pin TO-92 Box
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow unknow unknown unknown
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 12 V 12 V 12 V 12 V
Configuration SINGLE SINGLE SINGLE SINGLE
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Terminal form WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 700 MHz 700 MHz 700 MHz 700 MHz
Base Number Matches 1 1 1 -
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