PN4258A datasheet, PDF - EEWORLD Datasheet

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PN4258A: DescriptionTrans GP BJT PNP 12V 0.05A 3-Pin TO-92; CategoryDiscrete semiconductor The transistor; File Size44KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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PN4258A Overview

Trans GP BJT PNP 12V 0.05A 3-Pin TO-92

PN4258A Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	12 V
Configuration	SINGLE
JESD-30 code	O-PBCY-W3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	700 MHz
Base Number Matches	1

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, fi

ne.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 378-8960

2M258

2M258A

JEDEC TO-106

PNA258

PN1+258A

JEDEC TO-92

PNP S I L I C O N S W I T C H I N G TRANSISTOR

MAXIMUM RATINGS(T

f l

=25°C)

SYMBOL

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Col lector Current

Power Dissipation

Operating and Storage

Junction Temperature

V

CBO

V

CES

UNIT

VCEO

U

EBO

12

50

625

12

k.S

50

V

mA

2N4258,A

310

mW

°C

T

J'

T

stg

-65 TO +150

2N/PN4258

MIN

MAX

10

-

12

*».5

ELECTRICAL CHARACTERISTICS (T

ft

=25°C)

SYMBOL

'CES

IB

BV

C

BO

BVppc

BV

CEO

BV

EBO

V

CE(SAT)

V

CE(SAT)

V

BE(SAT)

VBE(SAT)

hFE

TEST CONO ITIONS

V

CE

=6.0V

V

CE

=6.0V,

v

BE

=o

l

c

=100yA

l

c

=100uA

l

c

=3.0mA

1

E

=100viA

IC=10mA,

I

B

=1 .OmA

lQ=50mA,

l

c

=10mA,

1

g=1 -OmA

l

c

=50mA !

B

=5.0mA

Vp

E

=0.5V,

l

c

=1 .OmA

2N/PN1»258A

MIN

MAX

10

1

.0

12

k

.5

0.15

0.5

0.95

1.5

120

3-0

3-5

15

20

0.75

15

0.75

15

30

700

0.15

0.5

0-95

1.5

120

UNIT

nA

V

v

CE

=3.ov,

HFE

fj

Cob

Cjb

r

on

toff

l

c

=10mA

I c=50mA

V

CE

=1.0V,

30

V

CE

=IOV,

|

c

=10mA, f=100MHz

700

VQ

B

=5.0V,

f=T»OkHz

V

EB

=0.5V,

f=UOkHz

l

c

=10mA,

I

B

1 = 1 .OmA

l

c

=10mA,

I

B

1 = I B 2 = 1 .OmA

IC=10mA,

lB1=l

B

2

= l 0 m A

MHz

3.0

3.5

15

18

15

pr

ns

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without

notice information ftimished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to

press. However NJ Semi-Conductors assumes no responsibility

for

any errors or omissions discov<ta?d in its use. NI

Semi-Conductors encourages customers to verify fhat datasheets are current before plncing orders.

PN4258A Related Products

	PN4258A	2N4258A	2N4258	PN4258
Description	Trans GP BJT PNP 12V 0.05A 3-Pin TO-92	Trans GP BJT PNP 12V 0.05A	Trans GP BJT PNP 12V 0.05A	Trans GP BJT PNP 12V 0.05A 3-Pin TO-92 Box
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknow	unknow	unknown
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	700 MHz	700 MHz	700 MHz	700 MHz
Base Number Matches	1	1	1	-

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