NAND01GW3A3DN6F datasheet, PDF

NAND01GW3A3DN6F: Description128MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48; Categorystorage storage; File Size150KB，5 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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128MX8 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	TSOP1,
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	12000 ns
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	1073741824 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	48
word count	134217728 words
character code	128000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	12 mm

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