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MT46H32M16LFBF-5IT:CTR

Description
DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60
Categorystorage    storage   
File Size1MB,96 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT46H32M16LFBF-5IT:CTR Overview

DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60

MT46H32M16LFBF-5IT:CTR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionVFBGA,
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B60
JESD-609 codee1
length9 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Maximum seat height1 mm
self refreshYES
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
512Mb: x16, x32 Automotive LPDDR SDRAM
Features
Automotive LPDDR SDRAM
MT46H32M16LF – 8 Meg x 16 x 4 banks
MT46H16M32LF – 4 Meg x 32 x 4 banks
MT46H16M32LG – 4 Meg x 32 x 4 banks
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh, 32ms for automotive temperature
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-6
Clock Rate
200 MHz
166 MHz
Access Time
5.0ns
5.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 32 Meg x 16 (8 Meg x 16 x 4 banks)
– 16 Meg x 32 (4 Meg x 32 x 4 banks)
• Addressing
– JEDEC-standard addressing
• Plastic "green" package
– 60-ball VFBGA (8mm x 9mm)
1
– 90-ball VFBGA (8mm x 13mm)
2
– 90-ball VFBGA (8mm x 13mm)
2
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 6ns @ CL = 3 (166 MHz)
• Power
– Standard I
DD2
/I
DD6
– Low-power I
DD2
/I
DD6
• Product certification
– Automotive
• Operating temperature range
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
• Design revision
Notes:
Marking
H
32M16
16M32
LF
BF
B5
BQ
-5
-6
None
L
A
IT
AT
:C
1. Only available for x16 configuration.
2. Only available for x32 configuration.
PDF: 09005aef846e285e
t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

MT46H32M16LFBF-5IT:CTR Related Products

MT46H32M16LFBF-5IT:CTR MT46H32M16LFBF-6IT:CTR MT46H16M32LFBQ-5AAT:C
Description DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, GREEN, PLASTIC, VFBGA-90
Is it Rohs certified? conform to conform to conform to
package instruction VFBGA, VFBGA, VFBGA, BGA90,9X15,32
Reach Compliance Code compliant unknown compliant
ECCN code EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 5 ns 5 ns 5 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PBGA-B60 R-PBGA-B60 R-PBGA-B90
JESD-609 code e1 e1 e1
length 9 mm 9 mm 13 mm
memory density 536870912 bit 536870912 bit 536870912 bit
Memory IC Type DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 32
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 60 60 90
word count 33554432 words 33554432 words 16777216 words
character code 32000000 32000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 105 °C
Minimum operating temperature -40 °C -40 °C -40 °C
organize 32MX16 32MX16 16MX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA VFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260 260
Maximum seat height 1 mm 1 mm 1 mm
self refresh YES YES YES
Maximum supply voltage (Vsup) 1.95 V 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30
width 8 mm 8 mm 8 mm
Maker Micron Technology Micron Technology -
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