EMF33
Transistors
Power management,
Dual-chip Bipolar Transistor
EMF33
Applications
Power management circuit
Dimensions
(Unit : mm)
EMT6
1.6
0.5
Features
1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are
housed independently in the EMT6 package.
2) Power switching circuit in a single package.
3) Mounting cost and area can be cut in half.
1.0
0.5 0.5
(6) (5) (4)
1.6
1.2
1pin mark
(1) (2) (3)
0.22
0.13
Each lead has same dimensions
Abbreviated symbol : F33
Structure
Epitaxial Plannar Silicon Transistor
Packaging specifications
Package
Type
EMF33
Tr1
Tr2
∗2
Equivalent circuit
Taping
T2R
8000
(6)
(5)
∗1
(4)
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25°C)
<Tr1>
R
2
Parameter
Supply voltage
Input voltage
Collector current
∗
Characteristics of built-in transistor.
Symbol
V
CC
V
IN
I
C(max)
∗
Limits
−12
−10
to +5
−500
Unit
V
V
mA
R
1
(1) Emitter
(2) Base
(3) Drain
(4) Source
(5) Gate
(6) Collector
(1)
(2)
(3)
∗1
ESD protection diode
∗2
Body diode
Tr1 : R
1
/R
2
=1kΩ/10kΩ
Tr2 : MOS FET
<Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continous
Pulsed
Continous
Reverse drain current
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
DR
I
DRP
∗
∗
Limits
30
±20
100
200
100
200
Unit
V
V
mA
mA
mA
mA
∗
PW≤10ms DUTY CYCLE≤50%
<Tr1, Tr2 in common>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
Symbol
P
D
Tj
Tstg
∗
Limits
150
120
150
−55
to +150
Unit
mW / TOTAL
mW / ELEMENT
°C
°C
∗
Each terminal mounted on a recommended land.
Rev.A
1/4
EMF33
Transistors
Electrical characteristic curves
<Tr1>
-
500
-
450
OUTPUT CURRENT : I
O
(mA)
-
400
-
350
-
300
-
250
-
200
-
150
-
100
-
50
0
0
-
1
OUTPUT VOLTAGE : V
O
(V)
-
2
I
I
=0
I
I
=0.5mA
Ta=25℃
pulsed
I
I
=5mA I
I
=4.5mA
I
I
=4mA
I
I
=3.5mA
I
I
=3mA
I
I
=2.5mA
I
I
=2mA
I
I
=1.5mA
I
I
=1mA
-
10
INPUT VOLTAGE : V
I
(on) (V)
OUTPUT CURRENT : I
O
(mA)
Vo=0.3V
pulsed
-
100
V
CC
=5V
pulsed
-
10
Ta=125℃
Ta=25℃
Ta=-40℃
-
1
Ta=-40℃
Ta=25℃
Ta=125
-
1
-
0.1
-
0.1
-
0.1
-
0.01
-
1
-
10
-
100
-
1000
0
-
0.5
-
1
-
1.5
-
2
OUTPUT CURRENT : I
O
(mA)
INTPUT VOLTAGE : V
I
(off) (V)
Fig.1 Output Current vs. Output Voltage
Fig.2 Input Voltage vs. Output Current
Fig.3 Output Current vs. Input Voltage
1000
OUTPUT VOLTAGE : V
O
(on) (V)
V
O
=5V
pulsed
DC CURRENT GAIN : G
I
100
Ta=125℃
-
1
I
O
/I
I
=20/1
pulsed
Ta=125℃
-
0.1
Ta=25℃
Ta=-40℃
10
Ta=25℃
Ta=-40℃
-
10
1
-
0.1
-
1
-
10
-
100
-
1000
-
0.01
-
1
-
100
-
1000
OUTPUT CURRENT : I
O
(mA)
OUTPUT CURRENT : I
O
(mA)
Fig.4 DC Current Gain vs. Output Current
Fig.5 Output Voltage vs. Output Current
<Tr2>
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
0.15
4V
DRAIN CURRENT : I
D
(A)
200m
3V
DRAIN CURRENT : I
D
(A)
3.5V
Ta=25°C
Pulsed
100m
50m
20m
10m
5m
2m
1m
0.5m
V
DS
=3V
Pulsed
2
V
DS
=3V
I
D
=0.1mA
Pulsed
1.5
0.1
2.5V
1
0.05
2V
V
GS
=
1.5V
Ta=125°C
75°C
25°C
−25°C
0.5
0.2m
0
0
1
2
3
4
5
0.1m
0
1
2
3
4
0
−50 −25
0
25
50
75
100
125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (°C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage vs.
channel temperature
Rev.A
3/4
EMF33
Transistors
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
20
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
V
GS
=4V
Pulsed
50
Ta=125°C
75°C
25°C
−25°C
V
GS
=2.5V
Pulsed
15
Ta=25°C
Pulsed
10
2
1
0.5
0.001 0.002
2
1
0.5
0.001 0.002
5
I
D
=0.1A
I
D
=0.05A
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
5
10
15
20
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static drain-source on-state
resistance vs. drain current (Ι)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
9
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(Ω)
REVERSE DRAIN CURRENT : I
DR
(A)
8
7
6
5
4
3
2
1
0
−50 −25
0
25
50
75
I
D
=100mA
V
GS
=4V
Pulsed
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.5
V
DS
=3V
Pulsed
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0.2
0.1
0.05
0.02
0.01
0.005
0.002
Ta=−25°C
25°C
75°C
125°C
V
GS
=0V
Pulsed
I
D
=50mA
Ta=125°C
75°C
25°C
−25°C
100 125
150
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (°C)
DRAIN CURRENT : I
D
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
Fig.8 Forward transfer
admittance vs. drain current
Fig.9 Reverse drain current vs.
source-drain voltage (Ι)
REVERSE DRAIN CURRENT : I
DR
(A)
200m
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
V
GS
=4V
Ta=25°C
Pulsed
50
20
CAPACITANCE : C (pF)
Ta
=25°C
f=1MH
Z
V
GS
=0V
1000
500
SWITHING TIME : t (ns)
t
f
t
d(off)
C
iss
10
5
200
100
50
20
10
5
2
0.1 0.2
Ta
=25°C
V
DD
=5V
V
GS
=5V
R
G
=10Ω
Pulsed
0V
C
oss
C
rss
t
r
t
d(on)
2
1
0.5
0.1
0
0.5
1
1.5
0.2
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V
SD
(V)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.10 Reverse drain current vs.
source-drain voltage (ΙΙ)
Fig.11 Typical capacitance vs.
drain-source voltage
Fig.12 Switching characteristics
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
Analogue and Mixed Signal
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