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MAP4KE33CATR

Description
Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size214KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MAP4KE33CATR Overview

Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

MAP4KE33CATR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-41
package instructionPLASTIC, DO-41, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage34.7 V
Minimum breakdown voltage31.4 V
Breakdown voltage nominal value33 V
Shell connectionISOLATED
Maximum clamping voltage45.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.13 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage28.2 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
P4KE6.8 thru P4KE400CA, e3
400 Watt Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
This 400 W Transient Voltage Suppressor (TVS) series is an economical
molded axial-leaded package to protect voltage-sensitive components from
destructive or partial degradation. They are available in both unidirectional
or bi-directional configurations as well as RoHS Compliant (annealed
matte-Tin finish) with an e3 suffix added to the part number. They have a
peak pulse power rating of 400 watts for a 10/1000 µs as depicted in
Figures 1 and 2. The nominal breakdown voltages (V
BR
) in this series
extend from 6.8 to 400 volts. Microsemi also offers a broad spectrum of
additional TVSs to meet your needs.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-41
(DO-204AL)
FEATURES
Economical series for thru-hole mounting
Available in both unidirectional and bi-directional (add C
or CA suffix to part number for bidirectional)
Voltages from 6.8 to 400 V Breakdown (V
BR
)
Fast Response
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for added
o
o
100% temperature cycle -55 C to +125 C (10X) as well
as surge (3X) and 24 hours HTRB with post test V
Z
&
I
R
(in the operating direction for unidirectional or both
directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, or JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers
RoHS Compliant devices avaialbe by adding “e3” suffix
Surface mount equivalents available as SMAJP4KE6.8
to SMAJP4KE400CA
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
APPLICATIONS / BENEFITS
Suppresses transients up to 400 watts @ 10/1000
μs
(see Figure 1)
Protects sensitive components such as IC’s, CMOS,
2
Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: P4KE5.0 to P4KE91A or CA
Class 2: P4KE5.0 to P4KE47A or CA
Class 3: P4KE5.0 to P4KE24A or CA
Class 4: P4KE5.0 to P4KE12A or CA
Secondary lightning protection per IEC61000-4-5
with 12 Ohms source impedance:
Class 1: P4KE5.0 to P4KE30A or CA
Class 2: P4KE5.0 to P4KE15A or CA
MAXIMUM RATINGS
Operating and Storage Temperature: -65°C to +150°C
Peak Pulse Power: 400 Watts at 10/1000
μs
(see Figure
1, 2 and 3 for t
W
, waveform and derating effects)
Impulse repetition rate (duty factor): 0.01%
Thermal Resistance: 50°C/W junction to leads @ 3/8
inch (10 mm) from body, or 110°C/W junction to ambient
when mounted on FR4 PC board with 4 mm
2
copper
pads (1oz) and track width 1 mm, length 25 mm
Steady-State Power: 2.5 Watts @ T
L
=25°C at 3/8 inch
º
(10 mm) from body, or 1.13 W at T
A
= 25 C on FR4 PC
board described for thermal resistance
Forward Voltage at 25°C: 3.5 V @ 30 A with 8.3 ms half-
sine wave (unidirectional only)
Solder temperatures: 260
°C
for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-
750, method 2026
MARKING: Body marked with part number
POLARITY: Band denotes cathode. Bidirectional
not marked
WEIGHT: 0.3 grams (approximate)
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
See package dimensions on last page
P4KE6.8 thru 400
Copyright
©
2005
8-04-2005 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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