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Datasheet> All Categories > Discrete semiconductor> The transistor> FXT649STZ
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FXT649STZ

Description
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size29KB，1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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FXT649STZ Overview

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

FXT649STZ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSIP-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V

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Download Datasheet
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 – FEB 94
FEATURES
* 25 Volt V
CEO
* 2 Amps continuous current
* Low saturation voltage
* P
tot
= 1 Watt
APPLICATIONS
* Motor driver
REFER TO ZTX649 FOR GRAPHS
FXT649
B
C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
35
25
5
6
2
1
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
35
25
5
0.1
10
0.1
0.12
0.23
0.9
0.8
70
100
75
15
150
50
200
200
150
50
0.3
0.5
1.25
1
300
MHz
pF
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=30V, I
E
=0
V
CB
=30V,
T
amb
=100°C
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
IC=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
3-46

FXT649STZ Related Products

FXT649STZ FXT649STOA FXT649STOB
Description Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A
Collector-emitter maximum voltage 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V
Maker Zetex Semiconductors - Zetex Semiconductors

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