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SS36

Description
3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size255KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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SS36 Overview

3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB

SS36 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMC, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage60 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current100 A
SS32 THRU SS310
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 100 Volts
DO-214AA
Forward Current -
3.0 Amperes
FEATURES
0.086 (2.20)
0.077 (1.95)
0.155(3.94)
0.130(3.30)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.122(3.12)
0.110(2.82)
MECHANICAL DATA
Case:
JEDEC DO-214AC molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.005
ounce, 0.138 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS32
SS33
SS34
SS35
SS36
SS38 SS310
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
3.0
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
0.55
100.0
0.70
0.5
20
500
-65 to +125
10
300
55.0
-65 to +150
-65 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.shunyegroup.com

SS36 Related Products

SS36 SS310 SS32 SS35 SS33 SS34 SS38
Description 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AC
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