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GS8342T36E-400

Description
Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, BGA-165
Categorystorage    storage   
File Size783KB,33 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric View All

GS8342T36E-400 Overview

Standard SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, BGA-165

GS8342T36E-400 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length17 mm
memory density37748736 bit
Memory IC TypeSTANDARD SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX36
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
Preliminary
GS8342T08/18/36E-400/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaCIO™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +150/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• Pin-compatible with present 9Mb and 18Mb and future 72Mb
and 144Mb devices
36Mb SigmaCIO DDR-II
Burst of 2 SRAM
167 MHz–400 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Common I/O x36 and x18 SigmaCIO DDR-II B2 RAMs
always transfer data in two packets. When a new address is
loaded, A0 presets an internal 1 bit address counter. The
counter increments by 1 (toggles) for each beat of a burst of
two data transfer.
Common I/O x8 SigmaCIO DDR-II B2 RAMs always transfer
data in two packets. When a new address is loaded, the LSB
is internally set to 0 for the first read or write transfer, and
incremented by 1 for the next transfer. Because the LSB is
tied off internally, the address field of a x8 SigmaCIO DDR-II
B4 RAM is always one address pin less than the advertised
index depth (e.g., the 4M x 8 has a 2M addressable index).
SigmaCIO™ Family Overview
The GS8342T08/18/36E are built in compliance with the
SigmaCIO DDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 37,748,736-bit (36Mb)
SRAMs. The GS8342T08/18/36E SigmaCIO SRAMs are just
one element in a family of low power, low voltage HSTL I/O
SRAMs designed to operate at the speeds needed to implement
economical high performance networking systems.
Clocking and Addressing Schemes
The GS8342T08/18/36E SigmaCIO DDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
Parameter Synopsis
-400
tKHKH
tKHQV
2.5 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.00d 1/2004
1/33
© 2003, Giga Semiconductor, Inc.
Specifications cited are design targets and are subject to change without notice. For latest documentation contact your GSI representative.
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