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APT551R6AN

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size393KB,4 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
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APT551R6AN Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

APT551R6AN Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerADPOW
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

APT551R6AN Related Products

APT551R6AN APT551R3AN
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible incompatible
Maker ADPOW ADPOW
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 6 A 6.5 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 150 W 150 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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