M5M5257BP-35 datasheet, PDF - EEWORLD Datasheet

M5M5257BP-35: DescriptionStandard SRAM, 256KX1, 35ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24; Categorystorage storage; File Size169KB，5 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M5257BP-35 Overview

Standard SRAM, 256KX1, 35ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	DIP
package instruction	DIP, DIP24,.3
Contacts	24
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	35 ns
I/O type	SEPARATE
JESD-30 code	R-PDIP-T24
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	24
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX1
Output characteristics	3-STATE
Exportable	NO
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	4.5 V
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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