HYM71V631601TH-75 datasheet, PDF

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HYM71V631601TH-75: DescriptionSynchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168; Categorystorage storage; File Size316KB，13 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYM71V631601TH-75 Overview

Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168

HYM71V631601TH-75 Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.012 A
Maximum slew rate	2.4 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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16Mx64 bits

PC133 SDRAM Unbuffered DIMM

based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh

HYM71V631601 H-Series

DESCRIPTION

The Hyundai HYM71V631601 H-Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of

eight 16Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP

package on a 168pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each

SDRAM are mounted on the PCB.

The HYM71V631601 H-Series are Dual In-line Memory Modules suitable for easy interchange and addition of

128Mbytes memory. The HYM71V631601 H-Series are offering fully synchronous operation referenced to a positive

edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are

internally pipelined to achieve very high bandwidth.

FEATURES

•

PC133/PC100MHz support

•

168pin SDRAM Unbuffered DIMM

•

Serial Presence Detect with EEPROM

•

1.375” (34.93mm) Height PCB with Single Sided

components

•

Single 3.3

0.3V power supply

•

All devices pins are compatible with LVTTL interface

•

Data mask function by DQM

•

SDRAM internal banks : four banks

•

Module bank : one physical bank

•

Auto refresh and self refresh

•

4096 refresh cycles / 64ms

•

Programmable Burst Length and Burst Type

-. 1, 2, 4, 8 or Full Page for Sequential Burst

-. 1, 2, 4 or 8 for Interleave Burst

•

Programmable /CAS Latency

-. 2, 3 Clocks

ORDERING INFORMATION

PART NO.

HYM71V631601TH-75

HYM71V631601LTH-75

MAX.

FREQUENCY

133MHz

INTERNAL

BANK

4 Banks

REF.

POWER

Normal

Low Power

SDRAM

PACKAGE

TSOP-II

PLATING

Gold

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.1/Dec.99

Hyundai MicroElectronics

HYM71V631601TH-75 Related Products

	HYM71V631601TH-75	HYM71V631601LTH-75
Description	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168	Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
Maker	SK Hynix	SK Hynix
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168
memory density	1073741824 bit	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64
Number of functions	1	1
Number of ports	1	1
Number of terminals	168	168
word count	16777216 words	16777216 words
character code	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	16MX64	16MX64
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	4096	4096
self refresh	YES	YES
Maximum standby current	0.012 A	0.012 A
Maximum slew rate	2.4 mA	2.4 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL

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