The AWB7129 is a highly linear, fully matched, power
amplifier module designed for picocell, femtocell, and
customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel
power levels meet the extremely demanding needs
of small cell infrastructure architectures. Designed for
LTE, WCDMA, HSDPA air interfaces operating in the
925 MHz to 960 MHz band, the AWB7129 delivers
up to +24.5 dBm of LTE (E-TM1.1) power with an
Vcc1
ACPR of -47 dBc. It operates from a convenient
+4.2 V supply and provides 30 dB of gain. The
device is manufactured using an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc2
RF Input
Matching
Network
Matching
Network
RF Output
Bias
Network
Power
Detector
Vref
Detector
Output
Figure 1: Block Diagram
204314A • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • September 26, 2016
AWB7129
V
REF
GND
GND
V
CC1
RF
IN
GND
V
DET
1
2
3
4
5
6
7
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
NAME
V
REF
GND
GND
V
CC1
RF
IN
GND
V
DET
GND
GND
GND
V
CC2
RF
OUT
GND
GND
DESCRIPTION
Reference Voltage
Ground
Ground
Supply Voltage
RF Input
Ground
Detector Voltage
Ground
Ground
Ground
Supply Voltage
RF Output
Ground
Ground
14 GND
13 GND
12 RF
OUT
11 V
CC2
10 GND
9 GND
8 GND
2
September 26, 2016 • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • 204314A
Preliminary Data Sheet
AWB7129
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
RF Input Power (P
IN
)
ESD Rating
Human Body Model
(1)
Charged Device Model
(2)
MSL Rating
(3)
Junction Temperature (T
J
)
Storage Temperature (T
STG
)
MIN
0
0
-
-
Class 1C
Class IV
4
-
-40
MAX
+5
+3.5
+28
+10
-
-
-
+150
+150
°C
°C
UNIT
V
V
dBm,
modulated
dBm, CW
Functional operation is not implied under these conditions. Exceeding any
one or a combination of the Absolute Maximum Rating Conditions may cause
permanent damage to the device. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Notes:
(1) JEDEC JS-001-2010.
(2) JEDEC JESD22-C101D.
(3) 260
°C
peak reflow.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
(1)
Case Temperature (T
C
)
(2)
MIN
925
+3.2
+2.80
0
-
-40
TYP
-
+4.2
+2.85
-
+24.5
-
MAX
960
+4.5
+2.90
+0.5
-
+85
UNIT
MHz
V
V
dBm
°C
PA "on"
PA "shut down"
COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) Typ RF Output Power is used during production test.
(2) Case Temperature references the board temperature at the ground paddle on the backside of the package.
204314A • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • September 26, 2016
Preliminary Data Sheet
3
AWB7129
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +4.2 V, V
REF
= +2.85 V, 50
Ω
system)
PARAMETER
Gain
(2)
ACPR
(1), (2), (3)
@ 10 MHz
@ 20 MHz
Power-Added Efficiency
(1), (2), (3)
Thermal Resistance (R
JC
)
Supply Current
(1), (2), (3)
Quiescent Current (Icq)
Reference Current
Leakage Current
Harmonics
2fo
3fo, 4fo
Input Return Loss
MIN
-
-
-
-
-
-
-
-
-
-
-
-
TYP
30
-47
-57
16.4
TBD
410
140
5.0
1.5
-40
-60
10
MAX
-
-
-
-
-
-
-
-
5
-
-
-
UNIT
dB
COMMENTS
dBc
%
°C/W
mA
mA
mA
µA
through V
REF
pin
V
CC
= +4.5 V, V
REF
= 0 V
Junction to Case
total through V
CC
pins
dBc
dB
P
OUT
≤
+24.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
V
CC
= +4.2 V, P
IN
= 0 dBm
Applies over full operating
temperature range
Spurious Output Level
(all spurious outputs)
-
-
-60
dBc
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR
Notes:
(1) ACPR and Efficiency measured at 942.5 MHz.
(2) P
OUT
= +24.5 dBm.
(3) LTE E-TM1.1 (10 MHz)
4
September 26, 2016 • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • 204314A
Preliminary Data Sheet
AWB7129
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes.
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the V
REF
voltage.
V
REF
0.1uF
1000pF
V
REF
GND
GND
1
2
3
4
5
6
7
GND
at slug
14
13
12
AWB7129
11
10
9
8
GND
GND
RF
OUT
V
CC2
GND
GND
GND
1000pF
0.1uF
10uF
100uF
100uF
TVS
Diode
RF Output
V
CC2
V
CC1
TVS
Diode
100uF
10uF
0.1uF
1000pF
V
CC1
RF
IN
GND
V
DET
RF Input
DET
OUT
0.1uF
100KΩ
4.7KΩ
Notes:
1. 10uF and 100uF capacitors are optional.
2. Applications that have large supply voltage transients may benefit from the
use of TVS diodes. For such applications, recommended TVS diodes are
SM05T1G or SMJ5.0A.
Figure 3: Application Circuit Schematic
204314A • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice • September 26, 2016
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