To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI MICROCOMPUTERS
3886 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
DESCRIPTION
The 3886 group is the 8-bit microcomputer based on the 740 fam-
ily core technology.
The 3886 group is designed for controlling systems that require
analog signal processing and include two serial I/O functions, A-D
converters, D-A converters, system data bus interface function,
watchdog timer, and comparator circuit.
The multi-master I
2
C bus interface can be added by option.
qPower
dissipation
In high-speed mode .......................................................... 40 mW
(at 10 MHz oscillation frequency, at 5 V power source voltage)
In low-speed mode ............................................................ 60
µW
(at 32 kHz oscillation frequency, at 3 V power source voltage)
qMemory
expansion possible (only for M38867M8A/E8A)
qOperating
temperature range .................................... –20 to 85°C
<Flash memory mode>
qSupply
voltage ................................................. V
CC
= 5 V ± 10 %
qProgram/Erase
voltage ............................... V
PP
= 11.7 to 12.6 V
qProgramming
method ...................... Programming in unit of byte
qErasing
method
Batch erasing ........................................ Parallel/Serial I/O mode
Block erasing .................................... CPU reprogramming mode
qProgram/Erase
control by software command
qNumber
of times for programming/erasing ............................ 100
qOperating
temperature range (at programming/erasing)
..................................................................... Normal temperature
FEATURES
<Microcomputer mode>
qBasic
machine-language instructions ...................................... 71
qMinimum
instruction execution time .................................. 0.4
µs
(at 10 MHz oscillation frequency)
qMemory
size
ROM ................................................................. 32K to 60K bytes
RAM ............................................................... 1024 to 2048 bytes
qProgrammable
input/output ports ............................................ 72
qSoftware
pull-up resistors ................................................. Built-in
qInterrupts
................................................. 21 sources, 16 vectors
(Included key input interrupt)
qTimers
............................................................................. 8-bit
!
4
qSerial
I/O1 .................... 8-bit
!
1(UART or Clock-synchronized)
qSerial
I/O2 ................................... 8-bit
!
1(Clock-synchronized)
qPWM
output circuit ....................................................... 14-bit
!
2
qBus
interface .................................................................... 2 bytes
qI
2
C bus interface (option) ............................................. 1 channel
qA-D
converter ............................................... 10-bit
!
8 channels
qD-A
converter ................................................. 8-bit
!
2 channels
qComparator
circuit ...................................................... 8 channels
qWatchdog
timer ............................................................ 16-bit
!
1
qClock
generating circuit ..................................... Built-in 2 circuits
(connect to external ceramic resonator or quartz-crystal oscillator)
qPower
source voltage
In high-speed mode .................................................. 4.0 to 5.5 V
(at 10 MHz oscillation frequency)
In middle-speed mode ........................................... 2.7 to 5.5 V(*)
(at 10 MHz oscillation frequency)
In low-speed mode ............................................... 2.7 to 5.5 V (*)
(at 32 kHz oscillation frequency)
(*: 4.0 to 5.5 V for Flash memory version)
sNotes
1. The flash memory version cannot be used for application em-
bedded in the MCU card.
2. Power source voltage Vcc of the flash memory version is 4.0
to 5.5 V.
APPLICATION
Household product, consumer electronics, communications, note
book PC, etc.
Wireless Connectivity
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