74HC1G32-Q100; 74HCT1G32-Q100
2-input OR gate
Rev. 1 — 8 August 2012
Product data sheet
1. General description
74HC1G32-Q100 and 74HCT1G32-Q100 are high-speed Si-gate CMOS devices. They
provide a 2-input OR function.
The standard output currents are half of those of the 74HC32-Q100 and 74HCT32-Q100.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Input levels:
For 74HC1G32-Q100: CMOS level
For 74HCT1G32-Q100: TTL level
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC1G32GW-Q100
74HCT1G32GW-Q100
74HC1G32GV-Q100
74HCT1G32GV-Q100
40 C
to +125
C
SC-74A
40 C
to +125
C
Name
TSSOP5
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
NXP Semiconductors
74HC1G32-Q100; 74HCT1G32-Q100
2-input OR gate
4. Marking
Table 2.
Marking codes
Marking code
[1]
HG
TG
H32
T32
Type number
74HC1G32GW-Q100
74HCT1G32GW-Q100
74HC1G32GV-Q100
74HCT1G32GV-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
2
B
A
Y
4
1
2
≥1
4
mna164
mna165
Fig 1. Logic symbol
Fig 2. IEC logic symbol
B
Y
A
mna166
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
+&*4
+&7*4
%
$
*1'
DDD
9
&&
<
Fig 4. Pin configuration
74HC_HCT1G32_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 8 August 2012
2 of 12
NXP Semiconductors
74HC1G32-Q100; 74HCT1G32-Q100
2-input OR gate
6.2 Pin description
Table 3.
Symbol
B
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
data input B
data input A
ground (0 V)
data output Y
supply voltage
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Inputs
A
L
L
H
H
B
L
H
L
H
Output
Y
L
H
H
H
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
Min
0.5
-
-
-
-
25
65
Max
+7.0
20
20
12.5
25
-
+150
200
Unit
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
74HC_HCT1G32_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 8 August 2012
3 of 12
NXP Semiconductors
74HC1G32-Q100; 74HCT1G32-Q100
2-input OR gate
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
74HC1G32-Q100
Min
2.0
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
6.0
V
CC
V
CC
+125
625
139
83
74HCT1G32-Q100
Min
4.5
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
-
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
Parameter
Conditions
40 C
to +85
C
Min
74HC1G32-Q100
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
2.0
mA; V
CC
= 4.5 V
I
O
=
2.6
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
O
= 2.6 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage current
supply current
input capacitance
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
1.5
0.1
0.1
0.1
0.33
0.33
1.0
10
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1.0
20
-
V
V
V
V
V
A
A
pF
1.9
4.4
5.9
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
40 C
to +125
C
Min
Max
Unit
74HC_HCT1G32_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 8 August 2012
4 of 12
NXP Semiconductors
74HC1G32-Q100; 74HCT1G32-Q100
2-input OR gate
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
C.
Symbol
Parameter
Conditions
40 C
to +85
C
Min
74HCT1G32-Q100
V
IH
V
IL
V
OH
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
20 A
I
O
=
2.0
mA
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
A
I
O
= 2.0 mA
I
I
I
CC
I
CC
C
I
input leakage current
supply current
additional supply
current
input capacitance
V
I
= V
CC
or GND; V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
= 0 A
-
-
-
-
-
-
0
0.15
-
-
-
1.5
0.1
0.33
1.0
10
500
-
-
-
-
-
-
-
0.1
0.4
1.0
20
850
-
V
V
A
A
A
pF
4.4
4.13
4.5
4.32
-
-
4.4
3.7
-
-
V
V
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
V
V
Typ
Max
40 C
to +125
C
Min
Max
Unit
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
6.0 ns. All typical values are measured at T
amb
= 25
C. For test circuit see
Figure 6
Symbol Parameter
74HC1G32-Q100
t
pd
propagation delay A and B to Y; see
Figure 5
V
CC
= 2.0 V; C
L
= 50 pF
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V; C
L
= 50 pF
C
PD
power dissipation V
I
= GND to V
CC
capacitance
[2]
[1]
Conditions
40 C
to +85
C
Min
Typ
Max
40 C
to +125
C
Unit
Min
Max
-
-
-
-
-
18
8
8
7
19
115
23
-
20
-
-
-
-
-
-
135
27
-
23
-
ns
ns
ns
ns
pF
74HC_HCT1G32_Q100
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 8 August 2012
5 of 12
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