2N5114, 2N5115, 2N5116
P Channel J-FET
Rev. V2
Features
•
Available in JAN, JANTX and JANTXV per MIL-PRF-19500/476
•
TO-18 and UB Package Types
•
Designed for High Reliability Switching Applications
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Gate-Source Breakdown Voltage
Test Conditions
V
DS
= 0, I
G
= 1.0 µA dc
Symbol Units
V
(BR)GSS
V dc
Min.
30
Max.
—
Drain-Source “On” State Voltage
V
GS
= 0 V, I
D
=
-15
mA dc 2N5114
V
GS
= 0 V, I
D
=
-7.0
mA dc 2N5115
V
GS
= 0 V, I
D
=
-3.0
mA dc 2N5116
V
DS
= 0, V
GS
= 20V
V
GS
= 12 V dc, V
DS
=
-15
V dc 2N5114
V
GS
= 7.0 V dc, V
DS
=
-15
V dc 2N5115
V
GS
= 5.0 V dc, V
DS
=
-15
V dc 2N5116
V
GS
= 0 V, V
DS
=
-18
V dc 2N5114
V
GS
= 0 V, V
DS
=
-15
V dc 2N5115
V
GS
= 0 V, V
DS
=
-15
V dc 2N5116
V
GS
=
-15
V dc, I
D
=
-1.0
nA dc 2N5114
V
GS
=
-15
V dc, I
D
=
-1.0
nA dc 2N5115
V
GS
=
-15
V dc, I
D
=
-1.0
nA dc 2N5116
V
DS (on)
V dc
—
-1.3
-0.8
-0.6
500
-500
-500
-500
-90
-60
-25
10
6.0
4.0
Gate Reverse Current
I
GSS
pA
—
Drain Current Cutoff
I
D(off)
pA
—
-30
-15
-5.0
5.0
3.0
1.0
Zero Gate Voltage Drain Current
I
DSS
mA
Gate-Source Cutoff
V
GS(off)
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Gate-Source Voltage
(2)
Drain-Source Voltage
Drain-Gate Voltage
(2)
Gate Current
Steady-State Power Dissipation
@ T
A
= 25°C
(1)
Junction & Storage Temperature Range
(1)
(2)
Symbol
V
GS
V
DS
V
DG
I
G
P
D
T
J and
T
STG
Value
30 V dc
30 V dc
30 V dc
50 mA dc
0.500 W
-65°C
to +200°C
Derate linearly 3.0 mW/
o
C for T
A
> +25
o
C
Symmetrical geometry allows operation of those units with source / drain leads interchanged
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5114, 2N5115, 2N5116
P Channel J-FET
Rev. V2
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Dynamic Characteristics
Small Signal, Drain-Source “On” State Resistance
Test Conditions
V
GS
= 0, I
D
=
-1.0
mA dc
2N5114
2N5115
2N5116
V
GS
= 0, I
D
= 0; f = 1kHz
2N5114
2N5115
2N5116
V
GS
= 12 V dc, V
DS
= 0 2N5114
V
GS
= 7.0 V dc, V
DS
= 0 2N5115
V
GS
= 5.0 V dc, V
DS
= 0 2N5116
V
GS
= 0 V dc, V
DS
=
-15
V dc f = 1.0 MHz
2N5114, 2N5115
2N5116
Symbol Units
Min.
Max.
r
ds(on)1
Ω
—
75
100
175
75
100
175
Small Signal, Drain-Source “On” State Resistance
r
ds(on)2
Ω
—
Small-Signal, Common-Source Short Circuit
Reverse Transfer Capacitance
C
rss
pF
—
7.0
Small-Signal, Common-Source Short Circuit
Input Capacitance
C
iss
pF
—
25
27
Parameter
Switching Characteristics
Test Conditions
Symbol Units
Min.
Max.
Turn-On Delay Time
2N5114
2N5115
2N5116
t
d(on)
ns
—
6
10
25
Rise Time
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
2N5114
2N5115
2N5116
t
r
ns
—
10
20
35
6
8
20
15
30
60
Turn-Off Delay Time
t
d(off)
ns
—
Fall Time
t
f
ns
—
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5114, 2N5115, 2N5116
P Channel J-FET
Rev. V2
VPT COMPONENTS. ALL RIGHTS RESERVED.
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vided by VPT Components as a service to its customers and may be used for informational purposes only. Ex-
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ment related to this document, VPT Components assumes no liability whatsoever. VPT Components assumes
no responsibility for errors or omissions in these materials. VPT Components may make changes to specifica-
tions and product descriptions at any time, without notice. VPT Components makes no commitment to update
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5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com