KIA
SEMICONDUCTOR
SEMICONDUCTORS
S
90A，30V
N-CHANNEL MOSFET
KNX3303A
1.Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This
advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switched mode power supplies, active power factor correction
based on half bridge topology.
2.
Features
n
n
n
n
R
DS(on)
=3.1mΩ@ V
GS
=10V
Improved dv/dt capability
Fast switching
Green device available
3.Symbol
Pin
4
5,6,7,8
1,2,3
Function
Gate
Drain
Source
1 of 5
Rev 1.1 JAN 2019
KIA
SEMICONDUCTOR
SEMICONDUCTORS
S
90A，30V
N-CHANNEL MOSFET
Rev1.0 Sep.2018
KNX3303A
4.
Ordering information
Part Number
KNG3303A
KNY3303A
Package
DFN3*3
DFN5*6
Brand
KIA
KIA
5.
Absolute maximum ratings
(T
A
=25°C,unless otherwise noted)
Rating
Units
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulse drain current (note 1)
Avalanche current (note 2)
Avalanche energy, (note 2)
T
C
=25
ºC
Maximum power dissipation
Derate above 25
ºC
P
D
T
J
,T
STG
T
C
=25ºC
T
C
=100ºC
T
C
=25ºC
Symbol
DFN3*3
DFN5*6
V
DSS
V
GSS
I
D
I
DP
I
AS
E
AS
43.4
0.35
30
+20
90*
57*
360*
50
125
69
0.55
-55-150
V
V
A
A
A
A
mJ
W
W/℃
℃
Junction & storage temperature range
*Drain current limited by maximum junction temperature.
6.
Thermal characteristics
Rating
DFN3*3
DFN5*6
Parameter
Thermal resistance, Junction-ambient
Thermal resistance, Junction-case
Symbol
R
θJA
R
θJC
Unit
ºC/W
ºC/W
95
2.88
62
1.81
2 of 5
Rev 1.1 JAN 2019
KIA
SEMICONDUCTOR
SEMICONDUCTORS
S
90A，30V
N-CHANNEL MOSFET
KNX3303A
Test Conditions
V
GS
=0V,I
DS
=250μA
Reference to 25°C, I
D
=1mA
(T
A
=25°C,unless otherwise noted)
Min
Typ
Max
Units
7.
Electrical characteristics
Parameter
Drain-source breakdown voltage
BV
DSS
temperature coefficient
/△T
J
Zero gate voltage drain current
Gate threshold voltage
V
GS(th)
temperature coefficient
Gate leakage current
Drain-source on-resistance(note3)
Forward transconductance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time(note 3,4)
Rise time(note 3,4)
Turn-off delay time(note 3,4)
Fall time(note 3,4)
Total gate charge(note 3,4)
Gate-source charge(note 3,4)
Gate-drain charge(note 3,4)
Single pulse avalanche energy
Continuous source current
Pulsed source current (note 3)
Diode forward voltage(note 3)
Reverse recovery time
Reverse recovery charge
I
DSS
V
GS(th)
△V
GS(th)
I
GSS
R
DS(on)
gfs
R
g
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
EAS
I
S
I
SM
V
SD
t
rr
Q
rr
V
DS
=15V, V
GS
=4.5V
I
DS
=24A
V
DD
=25V,L=0.1mH,I
AS
=24A
V
GS
=V
DS
=0V,force current
V
GS
=0V,I
S
=1A,T
J
=25°C
V
DS
=30V,I
S
=1A,
di/dt=100A/μs
V
DD
=15V, I
D
=15A,
R
G
=3.3Ω,V
GS
=10V
V
DS
=30V, V
GS
=0V, T
J
=25°C
V
DS
=24V, V
GS
=0V, T
J
=125°C
V
DS
=V
GS
, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=+20V, V
DS
=0V
V
GS
=10V,I
D
=24A
V
GS
=4.5V,I
D
=12A
V
DS
=10V,I
D
=10A
V
DS
=0V, V
GS
=0V,f=1MHz
V
DS
=15V,V
GS
=0V,
f=1MHz
-
-
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
31
-
-
-
-
-
-
-
1.6
-5
-
3.1
4.5
15.5
2
3070
400
315
12.6
19.5
42.8
13.2
24
4.2
13
-
-
-
-
-
-
-
90
360
1
-
-
mJ
A
A
V
nS
nC
nC
nS
pF
1
10
2.5
-
+100
4
6
-
4
S
Ω
μA
V
mV/°C
nA
mΩ
Symbol
BV
DSS
△BV
DSS
-
0.03
-
V/°C
30
-
-
V
Note:1: Repetitive rating, pulse width limited by max junction temperature.
2: V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=50A, R
G
=25Ω, starting T
J
=25°C
3: The data tested by pulsed, pulse width≦300us, duty cycle
≦2%
4: Essentially independent of operating temperature.
3 of 5
Rev 1.1 JAN 2019
DSP and ARM Processors
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