Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 400V V(DRM), 1 Element
| Parameter Name | Attribute value |
| package instruction | POST/STUD MOUNT, O-MUPM-D2 |
| Reach Compliance Code | unknown |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Maximum DC gate trigger current | 40 mA |
| Maximum DC gate trigger voltage | 1.6 V |
| Maximum holding current | 50 mA |
| JESD-30 code | O-MUPM-D2 |
| Maximum leakage current | 5 mA |
| On-state non-repetitive peak current | 350 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum on-state current | 11000 A |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -40 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Maximum rms on-state current | 35 A |
| Maximum repetitive peak off-state leakage current | 10 µA |
| Off-state repetitive peak voltage | 400 V |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Trigger device type | SCR |
| Base Number Matches | 1 |
| 2N6173 | 2N6399 | 2N6172 | 2N6174 | C106M1 | C106D1 | S6001L | S4016R | S0525R | S0308F1 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 400V V(DRM), 1 Element | Silicon Controlled Rectifier, 12A I(T)RMS, 5000mA I(T), 800V V(DRM), 1 Element, TO-220AB | Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 200V V(DRM), 1 Element | Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 600V V(DRM), 1 Element | Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 1 Element, TO-202AB | Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 1 Element, TO-202AB | Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 600V V(DRM), 1 Element, TO-220AB | Silicon Controlled Rectifier, 16A I(T)RMS, 16000mA I(T), 400V V(DRM), 1 Element, TO-220AB | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 1 Element, TO-220AB | Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Shell connection | ISOLATED | ANODE | ISOLATED | ISOLATED | ANODE | ANODE | ISOLATED | ANODE | ANODE | ANODE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum DC gate trigger current | 40 mA | 30 mA | 40 mA | 40 mA | 0.2 mA | 0.2 mA | 10 mA | 30 mA | 30 mA | 15 mA |
| Maximum DC gate trigger voltage | 1.6 V | 1.5 V | 1.6 V | 1.6 V | 0.8 V | 0.8 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Maximum holding current | 50 mA | 35 mA | 50 mA | 50 mA | 3 mA | 3 mA | 20 mA | 40 mA | 40 mA | 30 mA |
| JESD-30 code | O-MUPM-D2 | R-PSFM-T3 | O-MUPM-D2 | O-MUPM-D2 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| Maximum leakage current | 5 mA | 2 mA | 5.5 mA | 5 mA | 0.1 mA | 0.1 mA | 1 mA | 0.5 mA | 1 mA | 0.2 mA |
| On-state non-repetitive peak current | 350 A | 100 A | 350 A | 350 A | 20 A | 20 A | 30 A | 160 A | 300 A | 100 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 3 | 2 | 2 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum on-state current | 11000 A | 5000 A | 11000 A | 11000 A | 4000 A | 4000 A | 1600 A | 16000 A | 25000 A | 8000 A |
| Maximum operating temperature | 100 °C | 125 °C | 100 °C | 100 °C | 110 °C | 110 °C | 110 °C | 110 °C | 110 °C | 125 °C |
| Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| Package body material | METAL | PLASTIC/EPOXY | METAL | METAL | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | RECTANGULAR | ROUND | ROUND | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | POST/STUD MOUNT | FLANGE MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum rms on-state current | 35 A | 12 A | 35 A | 35 A | 4 A | 4 A | 1.6 A | 16 A | 25 A | 8 A |
| Maximum repetitive peak off-state leakage current | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA | 10 µA |
| Off-state repetitive peak voltage | 400 V | 800 V | 200 V | 600 V | 600 V | 400 V | 600 V | 400 V | 50 V | 30 V |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | SOLDER LUG | THROUGH-HOLE | SOLDER LUG | SOLDER LUG | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | UPPER | SINGLE | UPPER | UPPER | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Trigger device type | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR | SCR |
| package instruction | POST/STUD MOUNT, O-MUPM-D2 | - | POST/STUD MOUNT, O-MUPM-D2 | POST/STUD MOUNT, O-MUPM-D2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Is it Rohs certified? | - | incompatible | - | - | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| JEDEC-95 code | - | TO-220AB | - | - | TO-202AB | TO-202AB | TO-220AB | TO-220AB | TO-220AB | TO-202AB |
| JESD-609 code | - | e0 | - | - | e0 | e0 | e0 | e0 | e0 | e0 |
| Peak Reflow Temperature (Celsius) | - | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Terminal surface | - | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Maximum time at peak reflow temperature | - | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Maker | - | - | - | - | Loras Industries Inc. | Loras Industries Inc. | Loras Industries Inc. | Loras Industries Inc. | Loras Industries Inc. | Loras Industries Inc. |
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6173 | Digitron | SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR |
| 2N6172 | Digitron | SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR |
| NTE5564 | NTE | Silicon Controlled Rectifiers (SCR’s) |
| 2N6169 | Advanced Semiconductor, Inc. | Silicon Controlled Rectifier, 20A I(T)RMS, 6500mA I(T), 400V V(DRM), 1 Element, TO-48, TO-48, 2 PIN |
| MCR230D3 | Motorola ( NXP ) | Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE 311-02, 3 PIN |
| MCR231D3 | NXP(恩智浦) | SILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-208VAR1/4 |
| S6420D | Loras Industries Inc | Silicon Controlled Rectifier, 35A I(T)RMS, 22000mA I(T), 400V V(DRM), 1 Element |
| S6420B | Loras Industries Inc | Silicon Controlled Rectifier, 35A I(T)RMS, 22000mA I(T), 200V V(DRM), 1 Element |
| S6035D | Loras Industries Inc | Silicon Controlled Rectifier, 35A I(T)RMS, 35000mA I(T), 600V V(DRM), 1 Element |
| SIPS420 | Hutson Industries | Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element |
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