2N6172 datasheet, PDF - EEWORLD Datasheet

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2N6172: DescriptionSilicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 200V V(DRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size714KB，10 Pages; ManufacturerLoras Industries Inc.; Related ProductsFound10parts with similar functions to 2N6172

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2N6172 Overview

Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 200V V(DRM), 1 Element

2N6172 Parametric

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-MUPM-D2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Maximum DC gate trigger current	40 mA
Maximum DC gate trigger voltage	1.6 V
Maximum holding current	50 mA
JESD-30 code	O-MUPM-D2
Maximum leakage current	5.5 mA
On-state non-repetitive peak current	350 A
Number of components	1
Number of terminals	2
Maximum on-state current	11000 A
Maximum operating temperature	100 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Maximum rms on-state current	35 A
Maximum repetitive peak off-state leakage current	10 µA
Off-state repetitive peak voltage	200 V
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

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2N6172 Related Products

	2N6172	2N6399	2N6173	2N6174	C106M1	C106D1	S6001L	S4016R	S0525R	S0308F1
Description	Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 200V V(DRM), 1 Element	Silicon Controlled Rectifier, 12A I(T)RMS, 5000mA I(T), 800V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 400V V(DRM), 1 Element	Silicon Controlled Rectifier, 35A I(T)RMS, 11000mA I(T), 600V V(DRM), 1 Element	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 600V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 4000mA I(T), 400V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 600V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 16A I(T)RMS, 16000mA I(T), 400V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 1 Element, TO-220AB	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Shell connection	ISOLATED	ANODE	ISOLATED	ISOLATED	ANODE	ANODE	ISOLATED	ANODE	ANODE	ANODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	40 mA	30 mA	40 mA	40 mA	0.2 mA	0.2 mA	10 mA	30 mA	30 mA	15 mA
Maximum DC gate trigger voltage	1.6 V	1.5 V	1.6 V	1.6 V	0.8 V	0.8 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum holding current	50 mA	35 mA	50 mA	50 mA	3 mA	3 mA	20 mA	40 mA	40 mA	30 mA
JESD-30 code	O-MUPM-D2	R-PSFM-T3	O-MUPM-D2	O-MUPM-D2	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Maximum leakage current	5.5 mA	2 mA	5 mA	5 mA	0.1 mA	0.1 mA	1 mA	0.5 mA	1 mA	0.2 mA
On-state non-repetitive peak current	350 A	100 A	350 A	350 A	20 A	20 A	30 A	160 A	300 A	100 A
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	2	3	2	2	3	3	3	3	3	3
Maximum on-state current	11000 A	5000 A	11000 A	11000 A	4000 A	4000 A	1600 A	16000 A	25000 A	8000 A
Maximum operating temperature	100 °C	125 °C	100 °C	100 °C	110 °C	110 °C	110 °C	110 °C	110 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	METAL	PLASTIC/EPOXY	METAL	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR	ROUND	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	POST/STUD MOUNT	FLANGE MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	35 A	12 A	35 A	35 A	4 A	4 A	1.6 A	16 A	25 A	8 A
Maximum repetitive peak off-state leakage current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Off-state repetitive peak voltage	200 V	800 V	400 V	600 V	600 V	400 V	600 V	400 V	50 V	30 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	SOLDER LUG	THROUGH-HOLE	SOLDER LUG	SOLDER LUG	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	UPPER	SINGLE	UPPER	UPPER	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Trigger device type	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR	SCR
package instruction	POST/STUD MOUNT, O-MUPM-D2	-	POST/STUD MOUNT, O-MUPM-D2	POST/STUD MOUNT, O-MUPM-D2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Is it Rohs certified?	-	incompatible	-	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
JEDEC-95 code	-	TO-220AB	-	-	TO-202AB	TO-202AB	TO-220AB	TO-220AB	TO-220AB	TO-202AB
JESD-609 code	-	e0	-	-	e0	e0	e0	e0	e0	e0
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	-	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	-	-	-	-	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.	Loras Industries Inc.

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2N6172 Similar Products

Part Number	Manufacturer	Description
2N6172	Digitron	SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR
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NTE5564	NTE	Silicon Controlled Rectifiers (SCR’s)
2N6169	Advanced Semiconductor, Inc.	Silicon Controlled Rectifier, 20A I(T)RMS, 6500mA I(T), 400V V(DRM), 1 Element, TO-48, TO-48, 2 PIN
MCR230D3	Motorola ( NXP )	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, CASE 311-02, 3 PIN
MCR231D3	NXP(恩智浦)	SILICON CONTROLLED RECTIFIER,400V V(DRM),25A I(T),TO-208VAR1/4
S6420D	Loras Industries Inc	Silicon Controlled Rectifier, 35A I(T)RMS, 22000mA I(T), 400V V(DRM), 1 Element
S6420B	Loras Industries Inc	Silicon Controlled Rectifier, 35A I(T)RMS, 22000mA I(T), 200V V(DRM), 1 Element
S6035D	Loras Industries Inc	Silicon Controlled Rectifier, 35A I(T)RMS, 35000mA I(T), 600V V(DRM), 1 Element
SIPS420	Hutson Industries	Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element

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